SIHB21N80AE-GE3

DigiKey Part Number
742-SIHB21N80AE-GE3-ND
Manufacturer
Manufacturer Product Number
SIHB21N80AE-GE3
Description
MOSFET N-CH 800V 17.4A D2PAK
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 17.4A (Tc) 32W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
EDA/CAD Models
SIHB21N80AE-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1388 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥16.09000¥16.09
10¥13.53000¥135.30
100¥10.94450¥1,094.45
500¥10.70460¥5,352.30
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.