SIHB20N50E-GE3

DigiKey Part Number
SIHB20N50E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHB20N50E-GE3
Description
MOSFET N-CH 500V 19A D2PAK
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 500 V 19A (Tc) 179W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
Base Product Number
All prices are in CNY
Bulk
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥18.23000¥18.23
10¥15.30300¥153.03
100¥12.38040¥1,238.04
500¥12.10946¥6,054.73