Type | Description | Select All |
---|---|---|
Category | ||
Manufacturer | onsemi | |
Series | - | |
Packaging | Tray | |
Part Status | Active | |
Technology | Silicon Carbide (SiC) | |
Configuration | 2 N-Channel (Dual) | |
FET Feature | - | |
Drain to Source Voltage (Vdss) | 900V | |
Current - Continuous Drain (Id) @ 25°C | 149A (Tc) | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 15V | |
Vgs(th) (Max) @ Id | 4.3V @ 40mA | |
Gate Charge (Qg) (Max) @ Vgs | 546.4nC @ 15V | |
Input Capacitance (Ciss) (Max) @ Vds | 7007pF @ 450V | |
Power - Max | 352W (Tj) | |
Operating Temperature | -40°C ~ 175°C (TJ) | |
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Supplier Device Package | - | |
Base Product Number |
Quantity | Unit Price (Including 13% VAT) | Ext Price (Including 13% VAT) |
---|---|---|
1 | ¥1,415.53000 | ¥1,415.53 |
20 | ¥1,325.78500 | ¥26,515.70 |
40 | ¥1,275.94325 | ¥51,037.73 |