MJD112-1G

DigiKey Part Number
MJD112-1GOS-ND
Manufacturer
Manufacturer Product Number
MJD112-1G
Description
TRANS NPN DARL 100V 2A IPAK
Manufacturer Standard Lead Time
12 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole IPAK
Datasheet
 Datasheet
EDA/CAD Models
MJD112-1G Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
Transistor Type
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75 W
Frequency - Transition
25MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package
IPAK
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥8.46000¥8.46
75¥6.79227¥509.42
150¥5.38233¥807.35
525¥4.56215¥2,395.13
1,050¥3.71638¥3,902.20
2,025¥3.49851¥7,084.48
5,025¥3.33194¥16,743.00
10,050¥3.17815¥31,940.41
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.