FQP6N80
DigiKey Part Number	FQP6N80-ND
Manufacturer	onsemi
Manufacturer Product Number	FQP6N80
Description	MOSFET N-CH 800V 5.8A TO220-3
Customer Reference
Detailed Description	N-Channel 800 V 5.8A (Tc) 158W (Tc) Through Hole TO-220-3
Datasheet	Datasheet
EDA/CAD Models	FQP6N80 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	QFET®
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	158W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	FQP6

FQP6N80