FQI4N80TU is Obsolete and no longer manufactured.
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FQI4N80TU

DigiKey Part Number
FQI4N80TU-ND
Manufacturer
onsemi
Manufacturer Product Number
FQI4N80TU
Description
MOSFET N-CH 800V 3.9A I2PAK
Customer Reference
Detailed Description
N-Channel 800 V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole TO-262 (I2PAK)
Datasheet
 Datasheet
EDA/CAD Models
FQI4N80TU Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
QFET®
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI4N80