IPP60R520E6XKSA1 Infineon Technologies | Discrete Semiconductor Products

IPP60R520E6XKSA1
DigiKey Part Number	IPP60R520E6XKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPP60R520E6XKSA1
Description	MOSFET N-CH 600V 8.1A TO220-3
Customer Reference
Detailed Description	N-Channel 600 V 8.1A (Tc) 66W (Tc) Through Hole PG-TO220-3
Datasheet	Datasheet

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	520mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs	23.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	512 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Base Product Number	IPP60R