8.1A (Tc) Single FETs, MOSFETs

Results: 21
Manufacturer
Fairchild SemiconductorInfineon TechnologiesonsemiVishay SiliconixYAGEO XSEMI
Series
-CoolMOS™CoolMOS™ C6CoolSiC™ Gen 2HEXFET®XP10TN135
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyObsolete
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
100 V250 V600 V1200 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V10V15V, 18V
Rds On (Max) @ Id, Vgs
135mOhm @ 5A, 10V180mOhm @ 6A, 10V233.9mOhm @ 3A, 18V450mOhm @ 4.05A, 10V450mOhm @ 4.9A, 10V450mOhm @ 5.1A, 10V520mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 250µA3.5V @ 230µA4V @ 250µA5.1V @ 900µA
Gate Charge (Qg) (Max) @ Vgs
7.9 nC @ 18 V17.6 nC @ 10 V20 nC @ 5 V23.4 nC @ 10 V38 nC @ 10 V41 nC @ 10 V
Vgs (Max)
±16V+20V, -7V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 800 V440 pF @ 25 V512 pF @ 100 V770 pF @ 25 V928 pF @ 50 V1000 pF @ 25 V
FET Feature
-Current Sensing
Power Dissipation (Max)
2W (Ta), 20.8W (Tc)3.1W (Ta), 74W (Tc)29W (Tc)30W (Tc)38W (Tc)66W (Tc)74W (Tc)80W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
I2PAKPG-TO220-3PG-TO220-FPPG-TO252-3PG-TO263-7-12TO-220-3TO-220-5TO-220ABTO-220AB Full-PakTO-220F-3TO-252TO-263 (D2PAK)
Package / Case
TO-220-3TO-220-3 Full PackTO-220-5TO-252-3, DPAK (2 Leads + Tab), SC-63TO-262-3 Long Leads, I2PAK, TO-262AATO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
IRF634PBF
MOSFET N-CH 250V 8.1A TO220AB
Vishay Siliconix
6,342
In Stock
1 : ¥9.69000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 5.1A, 10V
4V @ 250µA
41 nC @ 10 V
±20V
770 pF @ 25 V
-
74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
197
In Stock
1 : ¥54.27000
Cut Tape (CT)
1,000 : ¥28.04535
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
8.1A (Tc)
15V, 18V
233.9mOhm @ 3A, 18V
5.1V @ 900µA
7.9 nC @ 18 V
+20V, -7V
290 pF @ 800 V
-
80W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
XP9575GH
XP10TN135H
MOSFET N-CH 100V 8.1A TO252
YAGEO XSEMI
1,000
In Stock
1 : ¥13.43000
Cut Tape (CT)
3,000 : ¥5.54132
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8.1A (Tc)
4.5V, 10V
135mOhm @ 5A, 10V
3V @ 250µA
17.6 nC @ 10 V
±20V
928 pF @ 50 V
-
2W (Ta), 20.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
INFINFIPAN60R360PFD7SXKSA1
IRFS634B_FP001
MOSFET N-CH 250V 8.1A TO220F
Fairchild Semiconductor
6,000
Marketplace
Unavailable
Unavailable in your selected currency
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 4.05A, 10V
4V @ 250µA
38 nC @ 10 V
±30V
1000 pF @ 25 V
-
38W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220F-3
TO-220-3 Full Pack
TO-220-3
IPP60R520C6XKSA1
MOSFET N-CH 600V 8.1A TO220-3
Infineon Technologies
0
In Stock
28,550
Marketplace
433 : ¥5.02686
Tube
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
8.1A (Tc)
10V
520mOhm @ 2.8A, 10V
3.5V @ 230µA
23.4 nC @ 10 V
±20V
512 pF @ 100 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3
TO-220-3
PG-TO-220-FP
IPA60R520C6XKSA1
MOSFET N-CH 600V 8.1A TO220-FP
Infineon Technologies
0
In Stock
111,009
Marketplace
424 : ¥5.17257
Bulk
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
8.1A (Tc)
10V
520mOhm @ 2.8A, 10V
3.5V @ 230µA
23.4 nC @ 10 V
±20V
512 pF @ 100 V
-
29W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
TO-263AB
IRF634STRRPBF
MOSFET N-CH 250V 8.1A D2PAK
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥17.16000
Cut Tape (CT)
800 : ¥9.57715
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 5.1A, 10V
4V @ 250µA
41 nC @ 10 V
±20V
770 pF @ 25 V
-
3.1W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IRF634STRLPBF
MOSFET N-CHANNEL 250V
Vishay Siliconix
0
In Stock
Check Lead Time
800 : ¥5.57908
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
-
-
-
8.1A (Tc)
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220AB
IRF634
MOSFET N-CH 250V 8.1A TO220AB
Vishay Siliconix
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 5.1A, 10V
4V @ 250µA
41 nC @ 10 V
±20V
770 pF @ 25 V
-
74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-263AB
IRF634S
MOSFET N-CH 250V 8.1A D2PAK
Vishay Siliconix
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 5.1A, 10V
4V @ 250µA
41 nC @ 10 V
±20V
770 pF @ 25 V
-
3.1W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO-220-FP
IRLI520N
MOSFET N-CH 100V 8.1A TO220AB FP
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
8.1A (Tc)
4V, 10V
180mOhm @ 6A, 10V
2V @ 250µA
20 nC @ 5 V
±16V
440 pF @ 25 V
-
30W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IRF840ALPBF
IRF634L
MOSFET N-CH 250V 8.1A I2PAK
Vishay Siliconix
0
In Stock
Active
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 5.1A, 10V
4V @ 250µA
41 nC @ 10 V
±20V
770 pF @ 25 V
-
-
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-220AB Full Pack
IRLI520NPBF
MOSFET N-CH 100V 8.1A TO220AB FP
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
8.1A (Tc)
4V, 10V
180mOhm @ 6A, 10V
2V @ 250µA
20 nC @ 5 V
±16V
440 pF @ 25 V
-
30W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
TO-263AB
IRF634SPBF
MOSFET N-CH 250V 8.1A D2PAK
Vishay Siliconix
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 5.1A, 10V
4V @ 250µA
41 nC @ 10 V
±20V
770 pF @ 25 V
-
3.1W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRC634PBF
IRC634PBF
MOSFET N-CH 250V 8.1A TO220-5
Vishay Siliconix
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 4.9A, 10V
4V @ 250µA
41 nC @ 10 V
±20V
770 pF @ 25 V
Current Sensing
74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-5
TO-220-5
TO-220-3
IRF634B-FP001
MOSFET N-CH 250V 8.1A TO220-3
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 4.05A, 10V
4V @ 250µA
38 nC @ 10 V
±30V
1000 pF @ 25 V
-
74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-220F
IRFS634B_FP001
MOSFET N-CH 250V 8.1A TO220F
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 4.05A, 10V
4V @ 250µA
38 nC @ 10 V
±30V
1000 pF @ 25 V
-
38W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220F-3
TO-220-3 Full Pack
TO252-3
IPD60R520C6BTMA1
MOSFET N-CH 600V 8.1A TO252-3
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
600 V
8.1A (Tc)
10V
520mOhm @ 2.8A, 10V
3.5V @ 230µA
23.4 nC @ 10 V
±20V
512 pF @ 100 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO-220-FP
IPA60R520E6XKSA1
MOSFET N-CH 600V 8.1A TO220-FP
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
8.1A (Tc)
10V
520mOhm @ 2.8A, 10V
3.5V @ 230µA
23.4 nC @ 10 V
±20V
512 pF @ 100 V
-
29W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
TO-220-3
IPP60R520E6XKSA1
MOSFET N-CH 600V 8.1A TO220-3
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
8.1A (Tc)
10V
520mOhm @ 2.8A, 10V
3.5V @ 230µA
23.4 nC @ 10 V
±20V
512 pF @ 100 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3
TO-220-3
TO252-3
IPD60R520C6ATMA1
MOSFET N-CH 600V 8.1A TO252-3
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
8.1A (Tc)
10V
520mOhm @ 2.8A, 10V
3.5V @ 230µA
23.4 nC @ 10 V
±20V
512 pF @ 100 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 21

8.1A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.