Single IGBTs

Results: 8
Manufacturer
Infineon TechnologiesSTMicroelectronics
Series
-MPowerMESH™TrenchStop®TrenchStop™
IGBT Type
-TrenchTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)
600 V650 V
Current - Collector (Ic) (Max)
14 A14.7 A15 A20 A30 A40 A42 A
Current - Collector Pulsed (Icm)
20 A28 A40 A45 A60 A80 A
Vce(on) (Max) @ Vge, Ic
1.6V @ 4.5V, 7A1.95V @ 15V, 7A2V @ 15V, 10A2V @ 15V, 15A2V @ 15V, 20A2.05V @ 15V, 15A2.1V @ 15V, 20A
Power - Max
24 W25 W30 W35.7 W37 W115 W125 W
Switching Energy
99µJ (on), 100µJ (off)120µJ (on), 270µJ (off)136µJ (on), 207µJ (off)160µJ (on), 60µJ (off)209µJ (on), 261µJ (off)570µJ4.1mJ (off)
Gate Charge
16 nC28 nC46 nC48 nC81 nC87 nC115 nC
Td (on/off) @ 25°C
17ns/188ns19ns/91ns20ns/165ns24.5ns/118ns30ns/160ns42.5ns/177ns1.1µs/5.2µs
Test Condition
400V, 10A, 22Ohm, 15V400V, 10A, 32Ohm, 15V400V, 15A, 10Ohm, 15V400V, 15A, 15Ohm, 15V400V, 20A, 10Ohm, 15V400V, 7A, 47Ohm, 15V480V, 7A, 1kOhm, 5V
Reverse Recovery Time (trr)
34 ns90 ns96 ns103 ns136 ns
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)
Package / Case
TO-220-3TO-220-3 Full Pack
Supplier Device Package
PG-TO220-3PG-TO220-3-31TO-220TO-220FP
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-220FP
STGF10M65DF2
IGBT TRENCH FS 650V 20A TO220FP
STMicroelectronics
1,433
In Stock
1 : ¥7.06000
Tube
Tube
Active
Trench Field Stop
650 V
20 A
40 A
2V @ 15V, 10A
30 W
120µJ (on), 270µJ (off)
Standard
28 nC
19ns/91ns
400V, 10A, 22Ohm, 15V
96 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
TO-220-F
STGF15H60DF
IGBT 600V 30A 30W TO220FP
STMicroelectronics
236
In Stock
1 : ¥12.89000
Tube
-
Tube
Active
Trench Field Stop
600 V
30 A
60 A
2V @ 15V, 15A
30 W
136µJ (on), 207µJ (off)
Standard
81 nC
24.5ns/118ns
400V, 15A, 10Ohm, 15V
103 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
TO-220-F
STGF7H60DF
IGBT TRENCH FS 600V 14A TO220FP
STMicroelectronics
2,594
In Stock
1 : ¥12.89000
Tube
-
Tube
Active
Trench Field Stop
600 V
14 A
28 A
1.95V @ 15V, 7A
24 W
99µJ (on), 100µJ (off)
Standard
46 nC
30ns/160ns
400V, 7A, 47Ohm, 15V
136 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
TO-220-3
STGP15H60DF
IGBT 600V 30A 115W TO220
STMicroelectronics
977
In Stock
1 : ¥16.67000
Tube
-
Tube
Active
Trench Field Stop
600 V
30 A
60 A
2V @ 15V, 15A
115 W
136µJ (on), 207µJ (off)
Standard
81 nC
24.5ns/118ns
400V, 15A, 10Ohm, 15V
103 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220FP
STGF7NB60SL
IGBT 600V 15A 25W TO220FP
STMicroelectronics
2,000
In Stock
1 : ¥18.14000
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-
600 V
15 A
20 A
1.6V @ 4.5V, 7A
25 W
4.1mJ (off)
Standard
16 nC
1.1µs/5.2µs
480V, 7A, 1kOhm, 5V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
TO-220FP
STGF20H60DF
IGBT TRENCH FS 600V 40A TO220FP
STMicroelectronics
2,370
In Stock
1 : ¥20.28000
Tube
-
Tube
Active
Trench Field Stop
600 V
40 A
80 A
2V @ 15V, 20A
37 W
209µJ (on), 261µJ (off)
Standard
115 nC
42.5ns/177ns
400V, 20A, 10Ohm, 15V
90 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
TO-220-3
IGP20N65F5XKSA1
IGBT TRENCH 650V 42A TO220-3
Infineon Technologies
497
In Stock
1 : ¥17.49000
Tube
Tube
Active
Trench
650 V
42 A
60 A
2.1V @ 15V, 20A
125 W
160µJ (on), 60µJ (off)
Standard
48 nC
20ns/165ns
400V, 10A, 32Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
TO-220AB Full Pack
IKA15N60TXKSA1
IGBT TRENCH 600V 14.7A TO220-3
Infineon Technologies
0
In Stock
Check Lead Time
500 : ¥8.54230
Tube
Tube
Active
Trench Field Stop
600 V
14.7 A
45 A
2.05V @ 15V, 15A
35.7 W
570µJ
Standard
87 nC
17ns/188ns
400V, 15A, 15Ohm, 15V
34 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3-31
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.