Single FETs, MOSFETs

Results: 20
Manufacturer
GeneSiC SemiconductorInfineon TechnologiesonsemiQorvoSTMicroelectronicsWolfspeed, Inc.
Series
-C3M™CoolSiC™G3R™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New DesignsObsolete
Technology
SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V1200 V
Current - Continuous Drain (Id) @ 25°C
30A30A (Tc)36A (Tc)39A (Tc)42A (Tc)45A (Tc)47A (Tc)48A52A (Tc)55A (Tc)60A (Tc)62A (Tc)64A (Tc)75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V15V15V, 18V18V20V-
Rds On (Max) @ Id, Vgs
18.4mOhm @ 54.3A, 18V36mOhm @ 50A, 15V45mOhm @ 35A, 12V48mOhm @ 35A, 15V50mOhm @ 25A, 18V52mOhm @ 30A, 18V53.5mOhm @ 33.3A, 15V54.4mOhm @ 19.3A, 18V56mOhm @ 35A, 20V59mOhm @ 20A, 15V64mOhm @ 20.1A, 18V74mOhm @ 16.7A, 18V78mOhm @ 13A, 18V83mOhm @ 13A, 18V
Vgs(th) (Max) @ Id
2.69V @ 12mA2.69V @ 7.5mA2.7V @ 18mA (Typ)3.6V @ 9.2mA4V @ 5mA4.3V @ 10mA4.3V @ 8mA5V @ 1mA5.2V @ 10mA5.2V @ 23.4mA5.2V @ 8.3mA5.7V @ 10mA5.7V @ 5.6mA5.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V31 nC @ 18 V33 nC @ 18 V34 nC @ 18 V43 nC @ 12 V51 nC @ 15 V51 nC @ 18 V52 nC @ 15 V54 nC @ 15 V94 nC @ 15 V94 nC @ 18 V105 nC @ 18 V106 nC @ 15 V106 nC @ 20 V
Vgs (Max)
+15V, -4V±15V+18V, -15V+19V, -8V+20V, -10V+20V, -5V+22V, -10V+22V, -8V+23V, -5V+23V, -7V+25V, -15V±25V-
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 400 V1060 pF @ 800 V1118 pF @ 400 V1145 pF @ 800 V1350 pF @ 1000 V1500 pF @ 100 V1560 pF @ 800 V1620 pF @ 800 V1789 pF @ 800 V1890 pF @ 325 V1900 pF @ 800 V1969 pF @ 800 V2900 pF @ 1000 V2929 pF @ 800 V
FET Feature
-Current Sensing
Power Dissipation (Max)
113.6W (Tc)150W (Tc)161W (Tc)181W (Tc)183W (Tc)214W (Tc)224W (Tc)227W (Tc)228W (Tc)242W (Tc)272W (Tc)357W (Tc)374W (Tc)388W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAK-7PG-TO247-3PG-TO247-4-1PG-TO247-4-8PG-TO263-7-12TO-247-4TO-263-7
Package / Case
TO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
CoolSiC Series
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
187
In Stock
1 : ¥103.03000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
1,131
In Stock
1 : ¥144.08000
Cut Tape (CT)
1,000 : ¥91.25666
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
48A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065090J
C3M0075120J
SICFET N-CH 1200V 30A D2PAK-7
Wolfspeed, Inc.
5,446
In Stock
1 : ¥161.57000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UF3C120080B7S
UF3SC120040B7S
1200V/40MOHM, SIC, STACKED FAST
Qorvo
1,650
In Stock
1 : ¥202.29000
Cut Tape (CT)
800 : ¥129.71491
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
47A (Tc)
12V
45mOhm @ 35A, 12V
6V @ 10mA
43 nC @ 12 V
±25V
1500 pF @ 100 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065090J
C3M0040120J1
1200V 40 M SIC MOSFET
Wolfspeed, Inc.
441
In Stock
1 : ¥221.83000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
64A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.2mA
94 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
272W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
140
In Stock
1 : ¥271.91000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
127A (Tc)
15V, 18V
18.4mOhm @ 54.3A, 18V
5.2V @ 23.4mA
145 nC @ 18 V
+20V, -5V
4580 pF @ 800 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
678
In Stock
1 : ¥411.72000
Cut Tape (CT)
1,000 : ¥285.20713
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
187A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R048M1HXTMA1
IMBG65R048M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
889
In Stock
1 : ¥83.49000
Cut Tape (CT)
1,000 : ¥47.37106
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
45A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
+23V, -5V
1118 pF @ 400 V
-
183W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
CoolSiC_MOSFET
IMBG120R060M1HXTMA1
SICFET N-CH 1.2KV 36A TO263
Infineon Technologies
1,865
In Stock
1 : ¥88.58000
Cut Tape (CT)
1,000 : ¥50.23111
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
-
83mOhm @ 13A, 18V
5.7V @ 5.6mA
34 nC @ 18 V
+18V, -15V
1145 pF @ 800 V
-
181W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NTBG045N065SC1
SILICON CARBIDE MOSFET, NCHANNEL
onsemi
416
In Stock
24,000
Factory
1 : ¥95.97000
Cut Tape (CT)
800 : ¥66.24091
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
62A (Tc)
15V, 18V
50mOhm @ 25A, 18V
4.3V @ 8mA
105 nC @ 18 V
+22V, -8V
1890 pF @ 325 V
-
242W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
352
In Stock
1 : ¥112.39000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
15V, 18V
54.4mOhm @ 19.3A, 18V
5.2V @ 10mA
51 nC @ 18 V
+20V, -5V
1620 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
339
In Stock
1 : ¥115.02000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
15V, 18V
54.4mOhm @ 19.3A, 18V
5.2V @ 8.3mA
51 nC @ 18 V
+20V, -5V
1620 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
CoolSiC Series
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
Infineon Technologies
159
In Stock
1 : ¥128.57000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
Current Sensing
228W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
SILICON CARBIDE POWER MOSFET 120
SCTWA60N120G2-4
SILICON CARBIDE POWER MOSFET 120
STMicroelectronics
598
In Stock
1 : ¥190.47000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
18V
52mOhm @ 30A, 18V
5V @ 1mA
94 nC @ 18 V
+22V, -10V
1969 pF @ 800 V
-
388W (Tc)
-55°C ~ 200°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
IMBG65R048M1HXTMA1
IMBG65R057M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
896
In Stock
1 : ¥73.48000
Cut Tape (CT)
1,000 : ¥41.66435
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
74mOhm @ 16.7A, 18V
5.7V @ 5mA
28 nC @ 18 V
+23V, -5V
930 pF @ 400 V
-
161W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NTBG040N120SC1
SICFET N-CH 1200V 60A D2PAK-7
onsemi
993
In Stock
20,000
Factory
1 : ¥183.74000
Cut Tape (CT)
800 : ¥106.18459
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1789 pF @ 800 V
-
357W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
961
In Stock
1 : ¥87.84000
Cut Tape (CT)
1,000 : ¥55.64187
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R40MT12J
SIC MOSFET N-CH 75A TO263-7
GeneSiC Semiconductor
1,432
In Stock
1 : ¥147.61000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
75A (Tc)
15V
48mOhm @ 35A, 15V
2.7V @ 18mA (Typ)
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
374W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R75MT12J
SIC MOSFET N-CH 42A TO263-7
GeneSiC Semiconductor
2
In Stock
1 : ¥90.55000
Tube
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1200 V
42A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
±15V
1560 pF @ 800 V
-
224W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R30MT12J
SIC MOSFET N-CH 96A TO263-7
GeneSiC Semiconductor
0
In Stock
Check Lead Time
1,000 : ¥143.30214
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
96A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
-
459W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.