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IMW65R030M1HXKSA1 | |
|---|---|
DigiKey Part Number | 448-IMW65R030M1HXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IMW65R030M1HXKSA1 |
Description | SILICON CARBIDE MOSFET, PG-TO247 |
Manufacturer Standard Lead Time | 26 Weeks |
Customer Reference | |
Detailed Description | N-Channel 650 V 58A (Tc) 197W (Tc) Through Hole PG-TO247-3-41 |
Datasheet | Datasheet |
Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 18V | |
Rds On (Max) @ Id, Vgs | 42mOhm @ 29.5A, 18V | |
Vgs(th) (Max) @ Id | 5.7V @ 8.8mA | |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V | |
Vgs (Max) | +20V, -2V | |
Input Capacitance (Ciss) (Max) @ Vds | 1643 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 197W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-3-41 | |
Package / Case | ||
Base Product Number |
Quantity
All prices are in CNY
Tube
| Quantity | Unit Price (Including 13% VAT) | Ext Price (Including 13% VAT) |
|---|---|---|
| 1 | ¥109.19000 | ¥109.19 |
| 30 | ¥88.37867 | ¥2,651.36 |
| 120 | ¥83.18033 | ¥9,981.64 |
| 510 | ¥75.38225 | ¥38,444.95 |
| 1,020 | ¥69.14370 | ¥70,526.57 |
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