Single FETs, MOSFETs

Showing

of 13

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFZ44NPBF MOSFET N-CH 55V 49A TO220AB Infineon Technologies	26,328 In Stock	1 : ¥10.67000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	49A (Tc)	10V	17.5mOhm @ 25A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1470 pF @ 25 V	-	94W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB3806PBF MOSFET N-CH 60V 43A TO220AB Infineon Technologies	3,243 In Stock	1 : ¥7.06000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	43A (Tc)	10V	15.8mOhm @ 25A, 10V	4V @ 50µA	30 nC @ 10 V	±20V	1150 pF @ 50 V	-	71W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1010EPBF MOSFET N-CH 60V 84A TO220AB Infineon Technologies	1,814 In Stock	1 : ¥8.95000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	60 V	84A (Tc)	10V	12mOhm @ 50A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	3210 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPA60R360P7SXKSA1 MOSFET N-CH 600V 9A TO220 Infineon Technologies	5,015 In Stock	1 : ¥9.69000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	360mOhm @ 2.7A, 10V	4V @ 140µA	13 nC @ 10 V	±20V	555 pF @ 400 V	-	22W (Tc)	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IRFZ48NPBF MOSFET N-CH 55V 64A TO220AB Infineon Technologies	3,397 In Stock	1 : ¥10.43000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	64A (Tc)	10V	14mOhm @ 32A, 10V	4V @ 250µA	81 nC @ 10 V	±20V	1970 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFZ44PBF MOSFET N-CH 60V 50A TO220AB Vishay Siliconix	10,371 In Stock	1 : ¥11.33000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	28mOhm @ 31A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1900 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP55NF06 MOSFET N-CH 60V 50A TO220AB STMicroelectronics	37,699 In Stock	1 : ¥12.81000 Tube	STripFET™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	18mOhm @ 27.5A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1300 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IRF1010EZPBF MOSFET N-CH 60V 75A TO220AB Infineon Technologies	9,595 In Stock	1 : ¥13.30000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	10V	8.5mOhm @ 51A, 10V	4V @ 100µA	86 nC @ 10 V	±20V	2810 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB7430PBF MOSFET N CH 40V 195A TO220 Infineon Technologies	1,076 In Stock	1 : ¥25.37000 Tube	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	6V, 10V	1.3mOhm @ 100A, 10V	3.9V @ 250µA	460 nC @ 10 V	±20V	14240 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPD25CN10NGATMA1 MOSFET N-CH 100V 35A TO252-3 Infineon Technologies	4,516 In Stock	1 : ¥9.44000 Cut Tape (CT) 2,500 : ¥3.91844 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	35A (Tc)	10V	25mOhm @ 35A, 10V	4V @ 39µA	31 nC @ 10 V	±20V	2070 pF @ 50 V	-	71W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFZ44EPBF MOSFET N-CH 60V 48A TO220AB Infineon Technologies	12,668 In Stock	1 : ¥12.23000 Tube	HEXFET®	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	60 V	48A (Tc)	10V	23mOhm @ 29A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1360 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFZ44VPBF IRFZ44 - 12V-300V N-CHANNEL POWE International Rectifier	500 Marketplace	Unavailable Unavailable in your selected currency	HEXFET®	Bulk	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	60 V	55A (Tc)	10V	16.5mOhm @ 31A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1812 pF @ 25 V	-	115W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3205PBF MOSFET N-CH 55V 110A TO220AB Infineon Technologies	0 In Stock Check Lead Time	1 : ¥12.81000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	110A (Tc)	10V	8mOhm @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	3247 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

Showing

of 13

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.