Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
OptiMOS™OptiMOS™-5UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V250 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)176A (Tc)261A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 50A, 10V2mOhm @ 100A, 10V94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
3.3V @ 120µA4.1V @ 270µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V104 nC @ 10 V195 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
840 pF @ 50 V2135 pF @ 25 V8125 pF @ 30 V
Power Dissipation (Max)
3W (Ta), 188W (Tc)235W (Tc)313W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO263-3PG-WSON-8-2TO-263 (D2PAK)
Package / Case
8-PowerWDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-263
FDB33N25TM
MOSFET N-CH 250V 33A D2PAK
onsemi
581
In Stock
1 : ¥18.23000
Cut Tape (CT)
800 : ¥10.18868
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC070N10NS5SCATMA1
BSC014N06NSSCATMA1
MOSFET N-CH 60V 261A WSON-8
Infineon Technologies
5,203
In Stock
1 : ¥28.41000
Cut Tape (CT)
4,000 : ¥13.83707
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
261A (Tc)
6V, 10V
1.4mOhm @ 50A, 10V
3.3V @ 120µA
104 nC @ 10 V
±20V
8125 pF @ 30 V
-
3W (Ta), 188W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-WSON-8-2
8-PowerWDFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB020N10N5LFATMA1
MOSFET N-CH 100V 176A TO263-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥60.01000
Cut Tape (CT)
1,000 : ¥34.05008
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
176A (Tc)
10V
2mOhm @ 100A, 10V
4.1V @ 270µA
195 nC @ 10 V
±20V
840 pF @ 50 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.