Single FETs, MOSFETs

Results: 5
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedGeneSiC SemiconductorInfineon TechnologiesSTMicroelectronics
Series
-AlphaMOSG3R™OptiMOS™SuperMESH™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V60 V100 V1000 V1700 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)1.85A (Tc)21A (Tc)25A (Ta), 28A (Tc)180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V15V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 100A, 10V5.1mOhm @ 20A, 10V208mOhm @ 12A, 15V350mOhm @ 900mA, 10V8.5Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA2.7V @ 5mA3V @ 250µA3.5V @ 275µA4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
4.1 nC @ 10 V16 nC @ 10 V25 nC @ 10 V51 nC @ 15 V200 nC @ 10 V
Vgs (Max)
±15V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
206 pF @ 30 V499 pF @ 25 V1128 pF @ 15 V1272 pF @ 1000 V14600 pF @ 25 V
Power Dissipation (Max)
720mW (Ta)5W (Ta), 24W (Tc)70W (Tc)175W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-DFN (5x6)DPAKPG-TO263-7-3SOT-23-3TO-247-3
Package / Case
8-PowerSMD, Flat LeadsTO-236-3, SC-59, SOT-23-3TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-7, D2PAK (6 Leads + Tab)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-DFN
AON6558
MOSFET N-CH 30V 25A/28A 8DFN
Alpha & Omega Semiconductor Inc.
56,337
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.39427
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
25A (Ta), 28A (Tc)
4.5V, 10V
5.1mOhm @ 20A, 10V
2.2V @ 250µA
25 nC @ 10 V
±20V
1128 pF @ 15 V
-
5W (Ta), 24W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
MFG_DPAK(TO252-3)
STD2NK100Z
MOSFET N-CH 1000V 1.85A DPAK
STMicroelectronics
4,712
In Stock
1 : ¥18.23000
Cut Tape (CT)
2,500 : ¥8.22816
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
1.85A (Tc)
10V
8.5Ohm @ 900mA, 10V
4.5V @ 50µA
16 nC @ 10 V
±30V
499 pF @ 25 V
-
70W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-7, D2Pak
IPB180N10S402ATMA1
MOSFET N-CH 100V 180A TO263-7
Infineon Technologies
2,139
In Stock
1 : ¥49.83000
Cut Tape (CT)
1,000 : ¥28.27399
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
2.5mOhm @ 100A, 10V
3.5V @ 275µA
200 nC @ 10 V
±20V
14600 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-7-3
TO-263-7, D2PAK (6 Leads + Tab)
TO-247-3
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
641
In Stock
1 : ¥100.49000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
SOT-23-3
DMP6350S-7
MOSFET P-CH 60V 1.5A SOT23
Diodes Incorporated
54,853
In Stock
1,431,000
Factory
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16894
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.5A (Ta)
4.5V, 10V
350mOhm @ 900mA, 10V
3V @ 250µA
4.1 nC @ 10 V
±20V
206 pF @ 30 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.