Single FETs, MOSFETs

Results: 12
Manufacturer
Infineon Technologiesonsemi
Series
CoolMOS™CoolMOS™ C6CoolMOS™ CFD2CoolMOS™ CFD7HEXFET®OptiMOS™SuperFET® III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V25 V650 V700 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)6A (Tc)38A (Ta), 100A (Tc)43.3A (Tc)50A (Tc)63.3A (Tc)68.5A (Tc)69A (Tc)75A (Tc)77A (Tc)83.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.05mOhm @ 30A, 10V24mOhm @ 42.4A, 10V25mOhm @ 37.5A, 10V29mOhm @ 35.8A, 10V37mOhm @ 33.1A, 10V41mOhm @ 24.8A, 10V41mOhm @ 33.1A, 10V48mOhm @ 29.4A, 10V65mOhm @ 3.7A, 4.5V80mOhm @ 17.6A, 10V660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA2V @ 250µA3.5V @ 3.3mA4.5V @ 1.24mA4.5V @ 1.79mA4.5V @ 1.8mA4.5V @ 2.12mA4.5V @ 2.9mA4.5V @ 200µA4.5V @ 3.3mA4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V22 nC @ 10 V59 nC @ 10 V102 nC @ 10 V145 nC @ 10 V167 nC @ 10 V183 nC @ 10 V236 nC @ 10 V270 nC @ 10 V300 nC @ 10 V330 nC @ 10 V
Vgs (Max)
±12V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
615 pF @ 100 V633 pF @ 10 V4200 pF @ 12 V4975 pF @ 400 V5030 pF @ 100 V7149 pF @ 400 V7240 pF @ 100 V7268 pF @ 400 V7330 pF @ 400 V7440 pF @ 100 V8400 pF @ 100 V
Power Dissipation (Max)
1.3W (Ta)2.5W (Ta), 96W (Tc)63W (Tc)227W (Tc)305W (Tc)320W (Tc)391W (Tc)500W (Tc)595W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-
Mounting Type
Surface MountThrough Hole
Supplier Device Package
Micro3™/SOT-23PG-TDSON-8-7PG-TO247-3PG-TO247-3-1PG-TO247-3-41PG-TO247-4-3PG-TO252-3-313TO-247-3
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-247-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
12Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
Infineon Technologies
155,445
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.03881
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
2.5V, 4.5V
65mOhm @ 3.7A, 4.5V
1.2V @ 250µA
12 nC @ 5 V
±12V
633 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC010NE2LSIATMA1
MOSFET N-CH 25V 38A/100A TDSON
Infineon Technologies
18,267
In Stock
1 : ¥16.58000
Cut Tape (CT)
5,000 : ¥7.21090
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
38A (Ta), 100A (Tc)
4.5V, 10V
1.05mOhm @ 30A, 10V
2V @ 250µA
59 nC @ 10 V
±20V
4200 pF @ 12 V
-
2.5W (Ta), 96W (Tc)
-
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
228
In Stock
1 : ¥98.27000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
69A (Tc)
10V
29mOhm @ 35.8A, 10V
4.5V @ 1.79mA
145 nC @ 10 V
±20V
7149 pF @ 400 V
-
305W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4-3
TO-247-4
TO-247-3 AC EP
IPW60R024CFD7XKSA1
MOSFET N-CH 650V 77A TO247-3-41
Infineon Technologies
195
In Stock
1 : ¥105.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
77A (Tc)
10V
24mOhm @ 42.4A, 10V
4.5V @ 2.12mA
183 nC @ 10 V
±20V
7268 pF @ 400 V
-
320W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3
NVHL025N65S3
MOSFET N-CH 650V 75A TO247-3
onsemi
268
In Stock
1,800
Factory
1 : ¥171.75000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
25mOhm @ 37.5A, 10V
4.5V @ 3mA
236 nC @ 10 V
±30V
7330 pF @ 400 V
-
595W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
IPW65R029CFD7XKSA1
IPW65R029CFD7XKSA1
MOSFET N-CH 650V 69A TO247-3
Infineon Technologies
190
In Stock
1 : ¥65.76000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
69A (Tc)
-
29mOhm @ 35.8A, 10V
4.5V @ 1.79mA
145 nC @ 10 V
±20V
7149 pF @ 400 V
-
305W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
370
In Stock
1 : ¥71.26000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
50A (Tc)
10V
41mOhm @ 24.8A, 10V
4.5V @ 1.24mA
102 nC @ 10 V
±20V
4975 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
TO252-3
IPD65R660CFDATMA2
MOSFET N-CH 700V 6A TO252-3-313
Infineon Technologies
1,807
In Stock
1 : ¥12.73000
Cut Tape (CT)
2,500 : ¥5.73468
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
700 V
6A (Tc)
10V
660mOhm @ 2.1A, 10V
4.5V @ 200µA
22 nC @ 10 V
±20V
615 pF @ 100 V
-
63W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO247-3
IPW65R080CFDFKSA2
MOSFET N-CH 650V 43.3A TO247-3
Infineon Technologies
154
In Stock
1 : ¥76.43000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
43.3A (Tc)
10V
80mOhm @ 17.6A, 10V
4.5V @ 1.8mA
167 nC @ 10 V
±20V
5030 pF @ 100 V
-
391W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
AUIRFP4310Z BACK
IPW65R048CFDAFKSA1
MOSFET N-CH 650V 63.3A TO247-3
Infineon Technologies
47
In Stock
1 : ¥105.82000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
63.3A (Tc)
10V
48mOhm @ 29.4A, 10V
4.5V @ 2.9mA
270 nC @ 10 V
±20V
7440 pF @ 100 V
-
500W (Tc)
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-3
TO-247-3
AUIRFP4310Z BACK
IPW65R037C6FKSA1
MOSFET N-CH 650V 83.2A TO247-3
Infineon Technologies
51
In Stock
1 : ¥96.38000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
83.2A (Tc)
10V
37mOhm @ 33.1A, 10V
3.5V @ 3.3mA
330 nC @ 10 V
±20V
7240 pF @ 100 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
PG-TO247-3
IPW65R041CFDFKSA1
MOSFET N-CH 650V 68.5A TO247-3
Infineon Technologies
0
In Stock
240 : ¥90.51479
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
68.5A (Tc)
10V
41mOhm @ 33.1A, 10V
4.5V @ 3.3mA
300 nC @ 10 V
±20V
8400 pF @ 100 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-1
TO-247-3
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.