IRF640PBF

DigiKey Part Number
IRF640PBF-ND
Manufacturer
Manufacturer Product Number
IRF640PBF
Description
MOSFET N-CH 200V 18A TO220AB
Manufacturer Standard Lead Time
14 Weeks
Customer Reference
Detailed Description
N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRF640PBF Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
All prices are in CNY
Bulk
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥15.68000¥15.68
50¥12.62620¥631.31
100¥10.38830¥1,038.83
1,000¥7.45834¥7,458.34
5,000¥6.81902¥34,095.10
10,000¥6.59326¥65,932.60
Manufacturers Standard Package