Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
SIPMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
185mA (Ta)200mA (Ta)
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 26µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.5 nC @ 10 V1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
23 pF @ 25 V45 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)360mW (Ta)
Supplier Device Package
PG-SOT23SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SN7002NH6433XTMA1
MOSFET N-CH 60V 200MA SOT23-3
Infineon Technologies
5,712
In Stock
1 : ¥2.71000
Cut Tape (CT)
10,000 : ¥0.39801
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
1.8V @ 26µA
1.5 nC @ 10 V
±20V
45 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
TP0610K-T1-GE3
MOSFET P-CH 60V 185MA SOT23-3
Vishay Siliconix
30,232
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.04982
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
185mA (Ta)
4.5V, 10V
6Ohm @ 500mA, 10V
3V @ 250µA
1.7 nC @ 15 V
±20V
23 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.