Single FETs, MOSFETs

Results: 6
Manufacturer
Nexperia USA Inc.onsemiPanjit International Inc.
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Ta)2.6A (Ta)4.1A (Ta)4.3A (Ta)4.5A (Ta)
Rds On (Max) @ Id, Vgs
32mOhm @ 4.5A, 4.5V40mOhm @ 2.6A, 4.5V48mOhm @ 4.5A, 4.5V52mOhm @ 4.3A, 4.5V56mOhm @ 4.1A, 4.5V85mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA1V @ 250µA1.2V @ 250µA1.3V @ 250µA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 4.5 V8.5 nC @ 4.5 V10 nC @ 4.5 V17 nC @ 4.5 V22.1 nC @ 4.5 V24 nC @ 10 V
Vgs (Max)
±8V±12V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 10 V675 pF @ 10 V907 pF @ 10 V980 pF @ 10 V1138 pF @ 6 V1820 pF @ 10 V
Power Dissipation (Max)
420mW (Ta)490mW (Ta), 4.15W (Tc)500mW (Ta)1.25W (Ta)
Supplier Device Package
SOT-23SOT-23-3SOT-23-3 (TO-236)TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
NTR4101PT1G
MOSFET P-CH 20V 1.8A SOT23-3
onsemi
47,868
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.71685
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
1.8A (Ta)
1.8V, 4.5V
85mOhm @ 1.6A, 4.5V
1.2V @ 250µA
8.5 nC @ 4.5 V
±8V
675 pF @ 10 V
-
420mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDN306P
MOSFET P-CH 12V 2.6A SUPERSOT3
onsemi
68,905
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.20100
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
2.6A (Ta)
1.8V, 4.5V
40mOhm @ 2.6A, 4.5V
1.5V @ 250µA
17 nC @ 4.5 V
±8V
1138 pF @ 6 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-236AB
PMV27UPER
MOSFET P-CH 20V 4.5A TO236AB
Nexperia USA Inc.
5,240
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.14870
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
1.8V, 4.5V
32mOhm @ 4.5A, 4.5V
950mV @ 250µA
22.1 nC @ 4.5 V
±8V
1820 pF @ 10 V
-
490mW (Ta), 4.15W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
11,389
In Stock
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.51342
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
1.8V, 4.5V
48mOhm @ 4.5A, 4.5V
1.3V @ 250µA
10 nC @ 4.5 V
±12V
980 pF @ 10 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
13,943
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.48827
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4.1A (Ta)
1.8V, 4.5V
56mOhm @ 4.1A, 4.5V
1.2V @ 250µA
4.6 nC @ 4.5 V
±12V
350 pF @ 10 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
23,980
In Stock
1 : ¥4.35000
Cut Tape (CT)
3,000 : ¥0.67113
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.3A (Ta)
1.8V, 4.5V
52mOhm @ 4.3A, 4.5V
1V @ 250µA
24 nC @ 10 V
±8V
907 pF @ 10 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.