Single FETs, MOSFETs

Results: 12
Manufacturer
Infineon TechnologiesRohm SemiconductorWolfspeed, Inc.
Series
-C3M™CoolSiC™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
250 V650 V1200 V
Current - Continuous Drain (Id) @ 25°C
7.2A (Tc)13A (Tc)25A (Tc)26A (Tc)36A (Tc)47A (Tc)48A52A (Tc)59A (Tc)70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V15V15V, 18V18V
Rds On (Max) @ Id, Vgs
34mOhm @ 38.3A, 18V39mOhm @ 27A, 18V59mOhm @ 20A, 15V60mOhm @ 25A, 10V63mOhm @ 16A, 18V78mOhm @ 13A, 18V83mOhm @ 13A, 18V125mOhm @ 8.5A, 18V286mOhm @ 4A, 18V294mOhm @ 4A, 18V455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id
3.6V @ 1mA4V @ 90µA5.6V @ 13.3mA5.7V @ 1.6mA5.7V @ 10mA5.7V @ 11mA5.7V @ 3.7mA5.7V @ 5.6mA5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
8.5 nC @ 18 V9.4 nC @ 18 V13 nC @ 15 V23 nC @ 18 V29 nC @ 10 V31 nC @ 18 V34 nC @ 18 V46 nC @ 18 V52 nC @ 15 V63 nC @ 18 V104 nC @ 18 V
Vgs (Max)
+15V, -4V+18V, -15V+20V, -10V±20V+22V, -4V+23V, -5V+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
289 pF @ 800 V312 pF @ 800 V345 pF @ 1000 V763 pF @ 800 V1060 pF @ 800 V1145 pF @ 800 V1526 pF @ 500 V1527 pF @ 800 V1900 pF @ 800 V2131 pF @ 400 V2350 pF @ 100 V
FET Feature
-Current Sensing
Power Dissipation (Max)
40.8W (Tc)75W (Tc)83W (Tc)136W (Tc)150W (Tc)181W (Tc)189W (Tc)227W (Tc)228W (Tc)262W
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO220-3-1PG-TO247-3-41PG-TO247-4-1PG-TO247-4-3PG-TO263-7-12TO-247-4LTO-263-7
Package / Case
TO-220-3TO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
12Results
Showing
of 12
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
IPP600N25N3GXKSA1
MOSFET N-CH 250V 25A TO220-3
Infineon Technologies
7,383
In Stock
1 : ¥23.73000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
25A (Tc)
10V
60mOhm @ 25A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
TO-247-3 AC EP
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
Infineon Technologies
358
In Stock
1 : ¥94.33000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
1,141
In Stock
1 : ¥144.08000
Cut Tape (CT)
1,000 : ¥91.25666
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
48A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3 AC EP
IMW120R220M1HXKSA1
SICFET N-CH 1.2KV 13A TO247-3
Infineon Technologies
1,242
In Stock
1 : ¥54.60000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
15V, 18V
286mOhm @ 4A, 18V
5.7V @ 1.6mA
8.5 nC @ 18 V
+23V, -7V
289 pF @ 800 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
C3M0065090J
C3M0350120J
SICFET N-CH 1200V 7.2A TO263-7
Wolfspeed, Inc.
528
In Stock
1 : ¥60.75000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.2A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
13 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
40.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
CoolSiC_MOSFET
IMBG120R090M1HXTMA1
SICFET N-CH 1.2KV 26A TO263
Infineon Technologies
2,597
In Stock
1 : ¥70.85000
Cut Tape (CT)
1,000 : ¥40.18075
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
-
125mOhm @ 8.5A, 18V
5.7V @ 3.7mA
23 nC @ 18 V
+18V, -15V
763 pF @ 800 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
CoolSiC_MOSFET
IMBG120R060M1HXTMA1
SICFET N-CH 1.2KV 36A TO263
Infineon Technologies
1,865
In Stock
1 : ¥88.58000
Cut Tape (CT)
1,000 : ¥50.23111
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
-
83mOhm @ 13A, 18V
5.7V @ 5.6mA
34 nC @ 18 V
+18V, -15V
1145 pF @ 800 V
-
181W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMZA65R027M1HXKSA1
IMZA65R027M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
316
In Stock
1 : ¥119.12000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
59A (Tc)
18V
34mOhm @ 38.3A, 18V
5.7V @ 11mA
63 nC @ 18 V
+23V, -5V
2131 pF @ 400 V
-
189W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4-3
TO-247-4
CoolSiC_MOSFET
IMBG120R045M1HXTMA1
SICFET N-CH 1.2KV 47A TO263
Infineon Technologies
1,007
In Stock
1 : ¥124.62000
Cut Tape (CT)
1,000 : ¥78.95229
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
47A (Tc)
-
63mOhm @ 16A, 18V
5.7V @ 7.5mA
46 nC @ 18 V
+18V, -15V
1527 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
CoolSiC Series
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
Infineon Technologies
159
In Stock
1 : ¥128.57000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
Current Sensing
228W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
IMBG120R220M1HXTMA1
IMBG120R220M1HXTMA1
SICFET N-CH 1.2KV 13A TO263
Infineon Technologies
948
In Stock
1 : ¥50.57000
Cut Tape (CT)
1,000 : ¥28.69819
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
-
294mOhm @ 4A, 18V
5.7V @ 1.6mA
9.4 nC @ 18 V
+18V, -15V
312 pF @ 800 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT4026DRHRC15
SCT3030ARC14
SICFET N-CH 650V 70A TO247-4L
Rohm Semiconductor
169
In Stock
1 : ¥283.73000
Tube
-
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
650 V
70A (Tc)
18V
39mOhm @ 27A, 18V
5.6V @ 13.3mA
104 nC @ 18 V
+22V, -4V
1526 pF @ 500 V
-
262W
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
Showing
of 12

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.