Single FETs, MOSFETs

Results: 17
Manufacturer
Diodes IncorporatedInfineon TechnologiesMicrochip TechnologyonsemiWolfspeed, Inc.
Series
-C3M™OptiMOS™StrongIRFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V40 V60 V70 V150 V650 V900 V1000 V1200 V
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta)11.5A (Tc)21A (Tc)22A (Tc)30A (Tc)35A (Tc)38A (Tc)66A (Tc)73A (Tc)100A (Tc)115A (Tc)203A (Tc)240A (Tc)381A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V15V20V
Rds On (Max) @ Id, Vgs
0.7mOhm @ 50A, 10V0.76mOhm @ 100A, 10V2.7mOhm @ 100A, 10V16.5mOhm @ 15A, 10V22.3mOhm @ 75A, 15V28.8mOhm @ 50A, 15V39mOhm @ 35A, 15V50mOhm @ 40A, 20V53.5mOhm @ 33.3A, 15V78mOhm @ 20A, 15V90mOhm @ 20A, 15V130mOhm @ 4.4A, 10V157mOhm @ 6.76A, 15V360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id
1V @ 250µA2.1V @ 250µA2.2V @ 230µA2.3V @ 250µA2.6V @ 2mA3.5V @ 1.2mA3.5V @ 11mA3.5V @ 5mA3.6V @ 1.86mA3.6V @ 17.7mA3.6V @ 23mA3.6V @ 9.2mA3.6V @ 9.5mA4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 4.5 V7.4 nC @ 10 V9.5 nC @ 15 V26 nC @ 15 V28 nC @ 15 V35 nC @ 15 V54 nC @ 15 V74 nC @ 15 V94 nC @ 4.5 V99 nC @ 15 V101 nC @ 15 V137 nC @ 20 V162 nC @ 15 V200 nC @ 10 V
Vgs (Max)
+15V, -4V±16V+18V, -8V+19V, -8V±20V+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 600 V298 pF @ 40 V640 pF @ 400 V660 pF @ 600 V700 pF @ 25 V1350 pF @ 1000 V1503 pF @ 600 V1990 pF @ 1000 V2900 pF @ 1000 V4818 pF @ 1000 V6085 pF @ 1000 V8400 pF @ 20 V12000 pF @ 75 V26000 pF @ 25 V
Power Dissipation (Max)
2W (Ta)3.8W (Ta), 556W (Tc)27W (Tc)54W (Tc)86W (Tc)98W (Tc)113.5W (Tc)113.6W (Tc)188W240W (Tc)300W (Tc)323W (Tc)326W (Tc)469W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAK-7DPAKPG-TDSON-8-6PG-TO247-3PG-TO263-7-3SOT-223-3TO-247-3TO-247-4TO-247-4LTO-263-7
Package / Case
8-PowerTDFNTO-247-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AATO-263-7, D2PAK (6 Leads + Tab)TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
17Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-223-3
ZXMN7A11GTA
MOSFET N-CH 70V 2.7A SOT223
Diodes Incorporated
9,581
In Stock
16,000
Factory
1 : ¥6.73000
Cut Tape (CT)
1,000 : ¥2.88098
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
70 V
2.7A (Ta)
4.5V, 10V
130mOhm @ 4.4A, 10V
1V @ 250µA
7.4 nC @ 10 V
±20V
298 pF @ 40 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
8-Power TDFN
BSC007N04LS6ATMA1
MOSFET N-CH 40V 100A TDSON-8-6
Infineon Technologies
6,374
In Stock
1 : ¥24.38000
Cut Tape (CT)
5,000 : ¥11.40444
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
381A (Tc)
4.5V, 10V
0.7mOhm @ 50A, 10V
2.3V @ 250µA
94 nC @ 4.5 V
±20V
8400 pF @ 20 V
-
188W
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
IRF150P220AKMA1
IRF150P220AKMA1
MOSFET N-CH 150V 203A TO247-3
Infineon Technologies
1,444
In Stock
1 : ¥91.29000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
203A (Tc)
10V
2.7mOhm @ 100A, 10V
4.6V @ 265µA
200 nC @ 10 V
±20V
12000 pF @ 75 V
-
3.8W (Ta), 556W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
C2D10120D
C3M0075120D
SICFET N-CH 1200V 30A TO247-3
Wolfspeed, Inc.
835
In Stock
1 : ¥161.57000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
54 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065090J
C3M0065100J
SICFET N-CH 1000V 35A D2PAK-7
Wolfspeed, Inc.
2,192
In Stock
1 : ¥175.12000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1000 V
35A (Tc)
15V
78mOhm @ 20A, 15V
3.5V @ 5mA
35 nC @ 15 V
+15V, -4V
660 pF @ 600 V
-
113.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065100K
C3M0040120K
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
1,980
In Stock
1 : ¥221.83000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.2mA
99 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0040120D
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
289
In Stock
1 : ¥221.83000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.5mA
101 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
C3M0021120K
SICFET N-CH 1200V 100A TO247-4L
Wolfspeed, Inc.
1,337
In Stock
1 : ¥336.77000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
15V
28.8mOhm @ 50A, 15V
3.6V @ 17.7mA
162 nC @ 15 V
+15V, -4V
4818 pF @ 1000 V
-
469W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0030090K
SICFET N-CH 900V 73A TO247-4
Wolfspeed, Inc.
2,709
In Stock
1 : ¥391.85000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
73A (Tc)
15V
39mOhm @ 35A, 15V
3.5V @ 11mA
74 nC @ 15 V
+15V, -4V
1503 pF @ 600 V
-
240W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0016120K
SICFET N-CH 1.2KV 115A TO247-4
Wolfspeed, Inc.
244
In Stock
1 : ¥748.41000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
115A (Tc)
15V
22.3mOhm @ 75A, 15V
3.6V @ 23mA
211 nC @ 15 V
+15V, -4V
6085 pF @ 1000 V
-
556W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
DPAK
NVD5C684NLT4G
MOSFET N-CHANNEL 60V 38A DPAK
onsemi
4,530
In Stock
77,500
Factory
1 : ¥13.55000
Cut Tape (CT)
2,500 : ¥6.09860
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
38A (Tc)
4.5V, 10V
16.5mOhm @ 15A, 10V
2.1V @ 250µA
4.6 nC @ 4.5 V
±20V
700 pF @ 25 V
-
27W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
C2D10120D
C3M0280090D
SICFET N-CH 900V 11.5A TO247-3
Wolfspeed, Inc.
8,308
In Stock
1 : ¥43.27000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
11.5A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5 nC @ 15 V
+18V, -8V
150 pF @ 600 V
-
54W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
C3M0120065K
650V 120M SIC MOSFET
Wolfspeed, Inc.
580
In Stock
1 : ¥90.72000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0120065D
650V 120M SIC MOSFET
Wolfspeed, Inc.
425
In Stock
1 : ¥90.72000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065090J
C3M0120065J
650V 120M SIC MOSFET
Wolfspeed, Inc.
1,470
In Stock
1 : ¥63.79000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
26 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
86W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4
MSC040SMA120B4
SICFET N-CH 1200V 66A TO247-4
Microchip Technology
173
In Stock
1 : ¥204.83000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
20V
50mOhm @ 40A, 20V
2.6V @ 2mA
137 nC @ 20 V
+23V, -10V
1990 pF @ 1000 V
-
323W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-263-7, D2Pak
IPB240N03S4LR8ATMA1
MOSFET N-CH 30V 240A TO263-7
Infineon Technologies
999
In Stock
1 : ¥41.54000
Cut Tape (CT)
1,000 : ¥21.45887
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
240A (Tc)
4.5V, 10V
0.76mOhm @ 100A, 10V
2.2V @ 230µA
380 nC @ 10 V
±16V
26000 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-7-3
TO-263-7, D2PAK (6 Leads + Tab)
Showing
of 17

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.