Single FETs, MOSFETs

Results: 13
Manufacturer
Goford SemiconductorGood-Ark SemiconductorInfineon TechnologiesLittelfuse Inc.Micro Commercial CoNexperia USA Inc.Renesas Electronics CorporationToshiba Semiconductor and Storage
Series
-HEXFET®StrongIRFET™ 2TrenchFET®TrenchP™U-MOSIX-HU-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V50 V60 V80 V
Current - Continuous Drain (Id) @ 25°C
60A (Ta)72A (Tc)83A (Tc)103A (Tc)110A (Tc)140A (Tc)170A (Tc)195A (Tc)200A (Tc)260A (Tc)425A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
0.7mOhm @ 25A, 10V1.29mOhm @ 50A, 10V1.65mOhm @ 100A, 10V2.4mOhm @ 165A, 10V4.5mOhm @ 50A, 10V4.7mOhm @ 30A, 10V7mOhm @ 20A, 10V7.5mOhm @ 20A, 10V8.4mOhm @ 20A, 10V8.6mOhm @ 20A, 10V8.8mOhm @ 41.5A, 10V9mOhm @ 70A, 10V11.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA2.5V @ 1mA2.5V @ 250µA3V @ 1mA3.5V @ 250µA3.6V @ 1mA3.8V @ 267µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V88 nC @ 10 V91 nC @ 10 V140 nC @ 4.5 V156 nC @ 10 V160 nC @ 10 V186 nC @ 10 V190 nC @ 10 V200 nC @ 10 V202 nC @ 10 V210 nC @ 10 V255 nC @ 10 V386 nC @ 10 V
Vgs (Max)
+10V, -20V±15V±16V±18V+20V, -10V±20V
Input Capacitance (Ciss) (Max) @ Vds
5326 pF @ 30 V5640 pF @ 10 V5810 pF @ 30 V7760 pF @ 10 V8100 pF @ 30 V10100 pF @ 10 V11210 pF @ 50 V11988 pF @ 30 V12000 pF @ 40 V12930 pF @ 25 V13500 pF @ 25 V15719 pF @ 25 V15870 pF @ 30 V
Power Dissipation (Max)
960mW (Ta), 132W (Tc)960mW (Ta), 170W (Tc)1.8W (Ta), 150W (Tc)100W (Tc)125W142W (Tc)178W (Tc)294W (Tc)298W (Tc)300W (Tc)350W (Tc)375W (Tc)380W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-DFN (4.9x5.75)8-DSOP Advance8-PPAK (5.1x5.71)8-SOP Advance (5x5)D2PAKDPAK+LFPAK88 (SOT1235)PG-TO263-3TO-220ABTO-263TO-263AA
Package / Case
8-PowerTDFN8-PowerVDFNSOT-1235TO-220-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
37,828
In Stock
1 : ¥14.53000
Cut Tape (CT)
5,000 : ¥5.84949
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
60A (Ta)
4.5V, 10V
4.7mOhm @ 30A, 10V
2.1V @ 1mA
160 nC @ 10 V
+10V, -20V
5640 pF @ 10 V
-
960mW (Ta), 132W (Tc)
175°C
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
13,595
In Stock
1 : ¥29.31000
Cut Tape (CT)
5,000 : ¥9.85177
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
260A (Tc)
4.5V, 10V
1.29mOhm @ 50A, 10V
2.5V @ 1mA
91 nC @ 10 V
±20V
8100 pF @ 30 V
-
960mW (Ta), 170W (Tc)
175°C
-
-
Surface Mount
8-DSOP Advance
8-PowerVDFN
TO-220AB PKG
IRLB3036PBF
MOSFET N-CH 60V 195A TO220AB
Infineon Technologies
15,721
In Stock
1 : ¥33.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
4.5V, 10V
2.4mOhm @ 165A, 10V
2.5V @ 250µA
140 nC @ 4.5 V
±16V
11210 pF @ 50 V
-
380W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-263AB
IXTA140P05T
MOSFET P-CH 50V 140A TO263
Littelfuse Inc.
784
In Stock
1 : ¥63.79000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
50 V
140A (Tc)
10V
9mOhm @ 70A, 10V
4V @ 250µA
200 nC @ 10 V
±15V
13500 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
2,306
In Stock
1 : ¥17.57000
Cut Tape (CT)
2,000 : ¥5.16775
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
60A (Ta)
6V, 10V
11.2mOhm @ 30A, 10V
3V @ 1mA
156 nC @ 10 V
+10V, -20V
7760 pF @ 10 V
-
100W (Tc)
175°C
-
-
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
D2PAK
MCB110P06Y-TP
P-CHANNEL MOSFET,D2-PAK
Micro Commercial Co
502
In Stock
1 : ¥33.58000
Cut Tape (CT)
800 : ¥20.27340
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
110A (Tc)
6V, 10V
8.4mOhm @ 20A, 10V
3.5V @ 250µA
88 nC @ 10 V
±18V
5810 pF @ 30 V
-
125W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PSMN1R9-80SSEJ
BUK7S0R7-40HJ
MOSFET N-CH 40V 425A LFPAK88
Nexperia USA Inc.
5,424
In Stock
1 : ¥48.44000
Cut Tape (CT)
2,000 : ¥23.57035
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
425A (Tc)
10V
0.7mOhm @ 25A, 10V
3.6V @ 1mA
202 nC @ 10 V
+20V, -10V
15719 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK88 (SOT1235)
SOT-1235
2,752
In Stock
1 : ¥29.47000
Cut Tape (CT)
800 : ¥17.77781
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
83A (Tc)
4.5V, 10V
8.8mOhm @ 41.5A, 10V
2.5V @ 1mA
190 nC @ 10 V
±20V
10100 pF @ 10 V
-
1.8W (Ta), 150W (Tc)
175°C (TJ)
-
-
Surface Mount
TO-263
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB019N08NF2SATMA1
IPB016N08NF2SATMA1
TRENCH 40<-<100V PG-TO263-3
Infineon Technologies
920
In Stock
1 : ¥34.40000
Cut Tape (CT)
800 : ¥20.77614
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
170A (Tc)
6V, 10V
1.65mOhm @ 100A, 10V
3.8V @ 267µA
255 nC @ 10 V
±20V
12000 pF @ 40 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GT095N04D3
GT065P06D5
MOSFET P-CH 60V 103A DFN5*6-8L
Goford Semiconductor
2,946
In Stock
1 : ¥12.23000
Cut Tape (CT)
5,000 : ¥5.30682
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
103A (Tc)
4.5V, 10V
7mOhm @ 20A, 10V
2.5V @ 250µA
62 nC @ 10 V
±20V
5326 pF @ 30 V
-
178W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (4.9x5.75)
8-PowerTDFN
GC11N65M
G080P06M
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
Goford Semiconductor
750
In Stock
1 : ¥15.52000
Cut Tape (CT)
800 : ¥8.68783
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
10V
7.5mOhm @ 20A, 10V
4V @ 250µA
186 nC @ 10 V
±20V
15870 pF @ 30 V
-
294W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GSGP03150
GSFP6901
MOSFET, P-CH, SINGLE, -72A, -60V
Good-Ark Semiconductor
9,520
In Stock
1 : ¥15.84000
Cut Tape (CT)
3,000 : ¥4.56996
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
72A (Tc)
4.5V, 10V
8.6mOhm @ 20A, 10V
2.5V @ 250µA
210 nC @ 10 V
±20V
12930 pF @ 25 V
-
142W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PPAK (5.1x5.71)
8-PowerTDFN
GT038P06M
GT038P06M
MOSFET P-CH 60V 200A 350W TO-26
Goford Semiconductor
739
In Stock
1 : ¥25.67000
Cut Tape (CT)
800 : ¥15.52386
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
200A (Tc)
4.5V, 10V
4.5mOhm @ 50A, 10V
2.5V @ 250µA
386 nC @ 10 V
±20V
11988 pF @ 30 V
-
350W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 13

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.