Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF5210PBF MOSFET P-CH 100V 40A TO220AB Infineon Technologies	7,430 In Stock	1 : ¥19.79000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	40A (Tc)	10V	60mOhm @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	2700 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP96P085T MOSFET P-CH 85V 96A TO220AB Littelfuse Inc.	7,705 In Stock	1 : ¥35.14000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	85 V	96A (Tc)	10V	13mOhm @ 48A, 10V	4V @ 250µA	180 nC @ 10 V	±15V	13100 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXTP76P10T MOSFET P-CH 100V 76A TO220AB Littelfuse Inc.	7,726 In Stock	1 : ¥49.92000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	76A (Tc)	10V	25mOhm @ 38A, 10V	4V @ 250µA	197 nC @ 10 V	±15V	13700 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRF5305PBF MOSFET P-CH 55V 31A TO220AB Infineon Technologies	33,398 In Stock	1 : ¥11.33000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	60mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPP120P04P4L03AKSA2 MOSFET P-CH 40V 120A TO220-3 Infineon Technologies	305 In Stock	1 : ¥30.29000 Tube	OptiMOS®-P2	Tube	Active	P-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	4.5V, 10V	3.4mOhm @ 100A, 10V	2.2V @ 340µA	234 nC @ 10 V	+5V, -16V	15000 pF @ 25 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IXTP28P065T MOSFET P-CH 65V 28A TO220AB Littelfuse Inc.	190 In Stock	1 : ¥29.47000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	65 V	28A (Tc)	10V	45mOhm @ 14A, 10V	4.5V @ 250µA	46 nC @ 10 V	±15V	2030 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXTP18P10T MOSFET P-CH 100V 18A TO220AB Littelfuse Inc.	910 In Stock 1,500 Factory	1 : ¥28.65000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	18A (Tc)	10V	120mOhm @ 9A, 10V	4.5V @ 250µA	39 nC @ 10 V	±15V	2100 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXFH44N50P MOSFET N-CH 500V 44A TO247AD Littelfuse Inc.	12 In Stock	1 : ¥93.59000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	44A (Tc)	10V	140mOhm @ 22A, 10V	5V @ 4mA	98 nC @ 10 V	±30V	5440 pF @ 25 V	-	658W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTP48P05T MOSFET P-CH 50V 48A TO220AB Littelfuse Inc.	4 In Stock 1,250 Factory	1 : ¥33.66000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	50 V	48A (Tc)	10V	30mOhm @ 24A, 10V	4.5V @ 250µA	53 nC @ 10 V	±15V	3660 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.