RF FETs, MOSFETs

Results: 2
Manufacturer
MACOM Technology SolutionsSTMicroelectronics
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tray
Technology
LDMOSMOSFET (Metal Oxide)
Frequency
225MHz500MHz
Gain
15dB17dB
Voltage - Test
7.5 V50 V
Current Rating (Amps)
5A16A
Current - Test
100 mA200 mA
Power - Output
8W200W
Voltage - Rated
25 V125 V
Package / Case
8-PowerVDFN375-04
Supplier Device Package
375-04, Style 2PowerFLAT™ (5x5)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
Frequency
Gain
Voltage - Test
Current Rating (Amps)
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
8PowerVDFN
PD54008L-E
RF MOSFET LDMOS 7.5V POWERFLAT
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥71.67000
Cut Tape (CT)
3,000 : ¥39.12809
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
LDMOS
-
500MHz
15dB
7.5 V
5A
-
200 mA
8W
25 V
8-PowerVDFN
PowerFLAT™ (5x5)
0
In Stock
250
Factory
Check Lead Time
10 : ¥1,746.51600
Tray
-
Tray
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Common Source
225MHz
17dB
50 V
16A
-
100 mA
200W
125 V
375-04
375-04, Style 2
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of 2

RF FETs, MOSFETs


RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.