Single FETs, MOSFETs

Results: 8
Manufacturer
Diodes IncorporatedGeneSiC SemiconductorInfineon TechnologiesLittelfuse Inc.Nexperia USA Inc.Rohm Semiconductor
Series
-G2R™HiPerFET™, Ultra X3OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
20 V30 V40 V240 V250 V300 V500 V3300 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)2A (Ta)3A (Ta)4A (Tc)5A (Tc)11A (Tc)15A (Tc)38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V10V20V
Rds On (Max) @ Id, Vgs
39mOhm @ 15A, 10V50mOhm @ 19A, 10V80mOhm @ 2A, 10V120mOhm @ 2.8A, 4.5V425mOhm @ 2.5A, 10V750mOhm @ 5.5A, 10V1.2Ohm @ 2A, 20V12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA2V @ 11µA2.5V @ 1mA2.8V @ 1mA3.5V @ 2mA4V @ 13µA4.5V @ 1mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V5.5 nC @ 4.5 V5.5 nC @ 10 V19.3 nC @ 10 V21 nC @ 20 V35 nC @ 10 V130 nC @ 10 V
Vgs (Max)
±8V+20V, -5V±20V
Input Capacitance (Ciss) (Max) @ Vds
90 pF @ 25 V238 pF @ 1000 V430 pF @ 100 V476 pF @ 10 V500 pF @ 15 V1030 pF @ 20 V2240 pF @ 25 V4700 pF @ 25 V
Power Dissipation (Max)
500mW (Ta)560mW (Ta), 12.5W (Tc)1.5W (Ta)25W (Tc)33.8W (Tc)74W (Tc)240W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-SOT23PG-TSDSON-8-2SOT-23-3SOT-89TO-247 (IXTH)TO-252TO-263-7TO-263HV
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-243AATO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2301L-7
MOSFET P-CH 20V 3A SOT23
Diodes Incorporated
107,522
In Stock
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.43742
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
120mOhm @ 2.8A, 4.5V
1.2V @ 250µA
5.5 nC @ 4.5 V
±8V
476 pF @ 10 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
Infineon Technologies
307,827
In Stock
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.03405
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2A (Ta)
4.5V, 10V
80mOhm @ 2A, 10V
2V @ 11µA
5 nC @ 10 V
±20V
500 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-89
BSS192,115
MOSFET P-CH 240V 200MA SOT89
Nexperia USA Inc.
42,335
In Stock
1 : ¥3.20000
Cut Tape (CT)
1,000 : ¥1.29304
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
240 V
200mA (Ta)
10V
12Ohm @ 200mA, 10V
2.8V @ 1mA
-
±20V
90 pF @ 25 V
-
560mW (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-89
TO-243AA
8-Power TDFN
BSZ42DN25NS3GATMA1
MOSFET N-CH 250V 5A TSDSON-8
Infineon Technologies
21,880
In Stock
1 : ¥10.26000
Cut Tape (CT)
5,000 : ¥4.04661
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
5A (Tc)
10V
425mOhm @ 2.5A, 10V
4V @ 13µA
5.5 nC @ 10 V
±20V
430 pF @ 100 V
-
33.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-2
8-PowerTDFN
RB098BM-40FNSTL
RD3G01BATTL1
PCH -40V -15A POWER MOSFET - RD3
Rohm Semiconductor
582
In Stock
1 : ¥9.11000
Cut Tape (CT)
2,500 : ¥3.78035
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
15A (Tc)
4.5V, 10V
39mOhm @ 15A, 10V
2.5V @ 1mA
19.3 nC @ 10 V
±20V
1030 pF @ 20 V
-
25W (Tc)
150°C (TJ)
-
-
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-247-AD-EP-(H)
IXTH11P50
MOSFET P-CH 500V 11A TO247
Littelfuse Inc.
120
In Stock
1 : ¥88.91000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
500 V
11A (Tc)
10V
750mOhm @ 5.5A, 10V
5V @ 250µA
130 nC @ 10 V
±20V
4700 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
GA20JT12-263
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
GeneSiC Semiconductor
3,145
In Stock
1 : ¥153.44000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
4A (Tc)
20V
1.2Ohm @ 2A, 20V
3.5V @ 2mA
21 nC @ 20 V
+20V, -5V
238 pF @ 1000 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263AB
IXFA38N30X3
MOSFET N-CH 300V 38A TO263
Littelfuse Inc.
0
In Stock
3,200
Factory
Check Lead Time
1 : ¥50.74000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
38A (Tc)
10V
50mOhm @ 19A, 10V
4.5V @ 1mA
35 nC @ 10 V
±20V
2240 pF @ 25 V
-
240W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263HV
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 8

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.