Single Bipolar Transistors

Results: 10
Manufacturer
onsemiSTMicroelectronicsToshiba Semiconductor and Storage
Packaging
BulkCut Tape (CT)Tape & Box (TB)TrayTube
Transistor Type
NPNNPN - DarlingtonPNP
Current - Collector (Ic) (Max)
100 mA1 A1.5 A2 A3 A
Voltage - Collector Emitter Breakdown (Max)
80 V100 V160 V230 V300 V400 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A500mV @ 50mA, 500mA600mV @ 2mA, 20mA1.5V @ 50mA, 500mA3V @ 40mA, 4A5V @ 750mA, 3A
Current - Collector Cutoff (Max)
100nA (ICBO)200nA (ICBO)20µA1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 1A, 5V60 @ 10mA, 10V100 @ 100mA, 5V100 @ 150mA, 2V100 @ 500mA, 2V140 @ 100mA, 5V1000 @ 2A, 3V
Power - Max
1 W1.5 W1.75 W7 W10 W30 W
Frequency - Transition
25MHz70MHz100MHz150MHz-
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-225AA, TO-126-3TO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package
IPAKTO-126-3TO-126NTO-251 (IPAK)TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
BC63916-D74Z
TRANS NPN 80V 1A TO92-3
onsemi
20,219
In Stock
1 : ¥3.94000
Cut Tape (CT)
2,000 : ¥0.87124
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1 W
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-126
KSC3503DS
TRANS NPN 300V 0.1A TO126-3
onsemi
11,033
In Stock
4,000
Factory
1 : ¥4.84000
Bulk
-
Bulk
Active
NPN
100 mA
300 V
600mV @ 2mA, 20mA
100nA (ICBO)
60 @ 10mA, 10V
7 W
150MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
1,653
In Stock
1 : ¥5.75000
Bulk
-
Bulk
Active
PNP
1.5 A
160 V
500mV @ 50mA, 500mA
100nA (ICBO)
140 @ 100mA, 5V
10 W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
3,734
In Stock
1 : ¥6.40000
Bulk
-
Bulk
Active
NPN
1.5 A
160 V
500mV @ 50mA, 500mA
100nA (ICBO)
140 @ 100mA, 5V
10 W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
STFI13N60M2
STU13005N
TRANS NPN 400V 3A TO251
STMicroelectronics
2,830
In Stock
1 : ¥5.01000
Tube
-
Tube
Active
NPN
3 A
400 V
5V @ 750mA, 3A
1mA
10 @ 1A, 5V
30 W
-
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
TO-251 (IPAK)
IPAK
MJD112-1G
TRANS NPN DARL 100V 2A IPAK
onsemi
522
In Stock
1 : ¥8.46000
Tube
-
Tube
Active
NPN - Darlington
2 A
100 V
3V @ 40mA, 4A
20µA
1000 @ 2A, 3V
1.75 W
25MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
IPAK
TTA004B,Q
TTA008B,Q
PB-F POWER TRANSISTOR TO-126 PC=
Toshiba Semiconductor and Storage
166
In Stock
1 : ¥7.39000
Tray
-
Tray
Active
PNP
2 A
80 V
500mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 2V
1.5 W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
TTA004B,Q
TTC011B,Q
PB-FPOWERTRANSISTORTO-126NPC=10W
Toshiba Semiconductor and Storage
472
In Stock
1 : ¥7.96000
Tray
-
Tray
Active
NPN
1 A
230 V
1.5V @ 50mA, 500mA
200nA (ICBO)
100 @ 100mA, 5V
1.5 W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
TTA004B,Q
TTA006B,Q
PB-F POWER TRANSISTOR TO-126N PC
Toshiba Semiconductor and Storage
409
In Stock
1 : ¥7.96000
Tray
-
Tray
Active
PNP
1 A
230 V
1.5V @ 50mA, 500mA
200nA (ICBO)
100 @ 100mA, 5V
1.5 W
70MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
TTA004B,Q
TTC015B,Q
PB-F POWER TRANSISTOR TO-126N PC
Toshiba Semiconductor and Storage
0
In Stock
Check Lead Time
1 : ¥7.39000
Tray
-
Tray
Active
NPN
2 A
80 V
500mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 2V
1.5 W
150MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.