ISSI LPDDR4/4X Mobile SDRAM | Datasheet Preview
The ISSI LPDDR4 and LPDDR4X are low-voltage memory devices available in 2, 4, and 8 gigabit densities. The devices are organized as one or two channels per device where each channel is eight banks and 16-bits. The LPDDR4 and LPDDR4X use a double-data-rate architecture to achieve high-speed operation. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. The LPDDR4 and LPDDR4X both offer fully synchronous operations referenced to both rising and falling edges of the clock. Both the LPDDR4 and LPDDR4X feature programmable read and write latencies in programmable and on-the-fly burst lengths. The low-voltage cores and I/O of these devices make them ideal for mobile applications.
Part List
图片 | 制造商零件编号 | 描述 | 可供货数量 | 价格 | 查看详情 | |
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IS43LQ16256A-062BLI | IC DRAM 4GBIT PARALLEL 200VFBGA | 0 - 立即发货 | See Page for Pricing | 查看详情 | ||
IS43LQ32256A-062BLI | IC DRAM 8GBIT PARALLEL 200TFBGA | 171 - 立即发货 | $214.17 | 查看详情 | ||
IS43LQ32128A-062BLI | IC DRAM 4GBIT PARALLEL 200VFBGA | 0 - 立即发货 | See Page for Pricing | 查看详情 |