The “VI” in the VIPower process technology name means Vertically-Integrated Power. The lower left hand corner of this slide shows a cross-section of an M0-3 product. This is a good representation of all the VIPower process generations talked about in this presentation. This diagram is essentially showing that the substrate, the bottom of the die, is the drain or the supply pin for the part. The power MOSFET is implemented from the top of the die, the source, to the bottom or substrate which is the drain. This configuration has a limitation. This process can have common high-side drivers where the drains are all tied together in the substrate. This process cannot have multiple low-side drivers as the drains must be common. As a result, there can be a single low-side driver or multiple high-side drivers on a single piece of silicon. STMicroelectronics products compensate for that by using a multi-chip package. A multichip package allows this product to have a dual high-side, as is shown in this package, and two low-side drivers. This is a multiple die, triple Island-type package that users will find in many of the VIPower H-Bridge solutions. All of the MOSFETs, both high side and low side, are N-Channel MOSFETs. The use of N-Channel MOSFETs in the high side drives means that this requires a charge pump. STMicroelectronics does not use P-Channel MOSFETs for the high-side switches in this technology. For all of the devices talked about today there is an absolute maximum voltage rating of about 41V. That is not the operating voltage range, but it is the maximum voltage for these devices. Expose these devices to a voltage higher than that, and users risk damaging them.