These are the M0-5 versions of the previous devices. They are essentially next generation devices. As an example the VNH5019 is the next generation of the VNH2SP30.  It is in the same type of package with the dual high-side and the two low-side MOSFETs in the same multi-power S030 Package. The VNH5050 is the next generation of the 45mOhm devices of M0-3. This is a much improved device. It comes in a much smaller package. The PSS036 package has more pins, but it is a much smaller package and much neater design. The VNH5050 is a 50mOhm/leg H-Bridge. There is also a VNH5180 that has 180 mOhms per leg. Neither of these devices have the same shoot through issues. Designers can PWM them and not worry about shoot through. Keep in mind there are still switching losses to consider. ST offers a low power version of the VNH5180 in the S016 package, additionally, there a next generation version of the VN770 in the Triple Island S028 package called the VNH5770. These two SO28 packaged devices are low power. They do not have exposed pads to dissipate heat. Their limitation is not so much from the power dissipation from the Rds(on) as it is from the ability to get the power out of the package.