If appropriate external gate resistance is selected, SiC power modules can reduce a total switching loss (E_ON + E_OFF + E_rr) by around 85% compared to state-of-the-art IGBT modules. This allows SiC power modules to be driven at a frequency of 50 kHz or higher, and therefore require the use of smaller passive filter components. Such operating conditions are difficult and generally not feasible with conventional IGBT modules. Furthermore, IGBT modules are normally used at about half the rated current due to the high switching loss which increases junction temperature. The current de-rating factor is much less with SiC modules because their switching loss is much lower. In other words, SiC modules can replace IGBT modules with higher rated current.