Shown here is ROHM’s lineup of 4th generation SiC FETs. A wide voltage range from 750 V to 1200 V is offered with ON resistances as low as 13 mΩ (typical). Packages include two through-hole types (TO-247N and TO-247-4L), along with a surface-mount package (TO-263-7L). This allows users to select the ideal product to meet set needs.