The low VCE(sat) BJT transistor solution does not require a blocking schottky diode because of the inherent design of it. Operating the BJT with a Beta of 100, the VCE(sat) would be 70mV. The base current, with a charging current of 1.0A, would be 10mA. This would result in power dissipation in the BJT of 70mW, and 50mW in the PMU. The total power dissipation would be 120mW.