MMICs are devices that combine a couple of functions in one package. MMICs are meant to increase the functionality using a less estate area when compared to discrete solutions. MMICs provide the customer with high end performance within a more integrated form factor. The key Parameters for MMICs are Gain, S-parameters, such as S11, S12, S21 and S22, and Output power at 1dB compression point, which is used to indicate device output power capability. The third order Output Intercept Point is used to gauge the device linearity and Noise Figure, which is a crucial parameter for applications where signal levels are very low. NXP MMICs are based on different processes to target specific applications. These processes are conventional bipolar with improved characteristics. Silicon-Germanium, which offers a competitive Noise Figures at a considerable lower price when compared other processes such as GaAs. BiCMOS process is a mix of Bipolar and CMOS process that utilizes the benefits of both processes.