SiGeC technology provides key improvements in the Noise Figure and Gain performance at frequencies up to 20 GHz. The addition of Carbon in the base layer of the SiGe npn transistors limits the boron diffusion into base layers of the transistors. This allows to construct steeper and better defined base junction with lower overall resistance. The lower resistance and smaller junction geometry allows for higher gain and lower noise figure out of the transistor at frequencies up to 20 GHz.