Due to the high level processing of HMIC, MACOM is able to develop both active and passive components onto the chip. The image here shows a cross-sectional view of the different structures that can be formed using the HMIC process. The active devices that are fabricated are silicon-based diode products. The cross-section shows a PIN diode in a series and shunt configuration. This allows for designs such as switches or attenuator circuits to be constructed. The inclusion of passive components allows for bias networks or filtering circuits to be included into these designs. The HMIC process is not limited to PIN diodes alone. Other active devices, such as Schottky diodes for mixer or detector applications and Varactor diodes for VCO/tuning applications can be formed as well.