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Most SSRs trade off channel resistance with capacitance and breakdown voltage. A vertically oriented channel structure in the SSR, as shown at the right, creates a higher channel resistance and a higher working voltage on the load structure, up to 400 V. The vertical Trench MOS process has a relatively low capacitance across the material boundaries due to the narrow area. Low Capacitance and Resistance type SSRs are used in Automatic Test Equipment and other applications where low channel On resistance is required and low switch capacitance is desired. The device capacitance directly affects the overall signal frequency that can be passed and contributes to the SSR Insertion Loss when the SSR is in the “open” condition. Also, the Channel On resistance affects the ability to make test measurements or make connections where a low On resistance is required and also affects Insertion Loss when the SSR is in the “closed” condition.
PTM Published on: 2009-03-27
