Single Bipolar Transistors

Results: 4
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA, 2V100 @ 150mA, 2V
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT223
BCP56-16TX
TRANS NPN 80V 1A SOT223
Nexperia USA Inc.
4,844
In Stock
1 : ¥3.78000
Cut Tape (CT)
1,000 : ¥0.80087
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
600 mW
100MHz
150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223
SOT223
BCP56-16TF
TRANS NPN 80V 1A SOT223
Nexperia USA Inc.
1,291
In Stock
1 : ¥3.69000
Cut Tape (CT)
4,000 : ¥0.41958
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
600 mW
100MHz
150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223
SOT223
BCP56-10TX
TRANS NPN 80V 1A SOT223
Nexperia USA Inc.
3,740
In Stock
1 : ¥3.78000
Cut Tape (CT)
1,000 : ¥0.80234
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
600 mW
100MHz
150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223
SOT223
BCP56-10TF
TRANS NPN 80V 1A SOT223
Nexperia USA Inc.
234
In Stock
1 : ¥3.20000
Cut Tape (CT)
4,000 : ¥0.57914
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
600 mW
100MHz
150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223
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of 4

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.