Single Bipolar Transistors

Results: 5
Packaging
BulkTape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA, 2V100 @ 150mA, 2V
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT223
BCP56-16T-QX
TRANS NPN 80V 1A SOT223
Nexperia USA Inc.
15,000
In Stock
1,000 : ¥0.71778
Tape & Reel (TR)
Tape & Reel (TR)
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
600 mW
155MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-261-4, TO-261AA
SOT-223
SOT223
BCP56-10T-QX
TRANS NPN 80V 1A SOT223
Nexperia USA Inc.
0
In Stock
11,000
Marketplace
Check Lead Time
14,000 : ¥0.47322
Tape & Reel (TR)
Tape & Reel (TR)
Bulk
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
600 mW
155MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-261-4, TO-261AA
SOT-223
SOT223
BCP56T-QF
TRANS NPN 80V 1A SOT223
Nexperia USA Inc.
0
In Stock
Check Lead Time
16,000 : ¥0.46857
Tape & Reel (TR)
Tape & Reel (TR)
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
600 mW
155MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-261-4, TO-261AA
SOT-223
SOT223
BCP56-10T-QF
TRANS NPN 80V 1A SOT223
Nexperia USA Inc.
0
In Stock
Check Lead Time
16,000 : ¥0.46857
Tape & Reel (TR)
Tape & Reel (TR)
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
600 mW
155MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-261-4, TO-261AA
SOT-223
SOT223
BCP56-16T-QF
TRANS NPN 80V 1A SOT223
Nexperia USA Inc.
0
In Stock
Check Lead Time
16,000 : ¥0.46857
Tape & Reel (TR)
Tape & Reel (TR)
Active
NPN
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
600 mW
155MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-261-4, TO-261AA
SOT-223
Showing
of 5

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.