IGBT Modules

Results: 2
Current - Collector (Ic) (Max)
10 A15 A
Vce(on) (Max) @ Vge, Ic
1.6V @ 15V, 10A-
Current - Collector Cutoff (Max)
3 µA4.5 µA
Input Capacitance (Cies) @ Vce
1.89 nF @ 25 V2.82 nF @ 25 V
Operating Temperature
-40°C ~ 175°C (TJ)-40°C ~ 75°C (TJ)
Supplier Device Package
AG-EASY1BAG-EASY1B-2
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Series
Package
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IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FP15R12W1T7PBPSA1
FP15R12W1T7PBPSA1
LOW POWER EASY AG-EASY1B-1
Infineon Technologies
13
In Stock
1 : ¥444.63000
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Three Phase Inverter
1200 V
15 A
20 mW
-
3 µA
2.82 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY1B
FP10R12W1T7B11BOMA1
FP10R12W1T7B11BOMA1
IGBT MODULE 1200V 10A 20MW EASY
Infineon Technologies
21
In Stock
1 : ¥333.80000
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Tray
Active
Trench Field Stop
Three Phase Inverter
1200 V
10 A
20 mW
1.6V @ 15V, 10A
4.5 µA
1.89 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 75°C (TJ)
Chassis Mount
Module
AG-EASY1B-2
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of 2

IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.