Single FETs, MOSFETs

Results: 3
Manufacturer
EPCInfineon Technologies
Series
eGaN®HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V200 V250 V
Current - Continuous Drain (Id) @ 25°C
93A (Tc)102A (Ta)375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 32A, 5V3.5mOhm @ 74A, 10V17.5mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
2.5V @ 8mA4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 5 V270 nC @ 10 V300 nC @ 10 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
3195 pF @ 100 V10880 pF @ 50 V11560 pF @ 25 V
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)520W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
7-QFN (3x5)DirectFET™ Isometric L8TO-247AC
Package / Case
7-PowerWQFNDirectFET™ Isometric L8TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC2304ENGRT
EPC2304ENGRT
TRANS GAN 200V .005OHM 3X5PQFN
EPC
20,661
In Stock
1 : ¥69.04000
Cut Tape (CT)
3,000 : ¥36.71239
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
102A (Ta)
5V
3.1mOhm @ 32A, 5V
2.5V @ 8mA
24 nC @ 5 V
+6V, -4V
3195 pF @ 100 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
TO-247-3 AC EP
IRFP4768PBF
MOSFET N-CH 250V 93A TO247AC
Infineon Technologies
2,612
In Stock
1 : ¥63.13000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
93A (Tc)
10V
17.5mOhm @ 56A, 10V
5V @ 250µA
270 nC @ 10 V
±20V
10880 pF @ 50 V
-
520W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
DIRECTFET L8
AUIRF7769L2TR
MOSFET N-CH 100V 375A DIRECTFET
Infineon Technologies
7,917
In Stock
1 : ¥77.50000
Cut Tape (CT)
4,000 : ¥41.18083
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
375A (Tc)
10V
3.5mOhm @ 74A, 10V
4V @ 250µA
300 nC @ 10 V
±20V
11560 pF @ 25 V
-
3.3W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DirectFET™ Isometric L8
DirectFET™ Isometric L8
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.