Single FETs, MOSFETs

Results: 4
Series
CoolMOS™CoolMOS™ CFD7CoolMOS™ P7
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)26A (Tc)31A (Tc)
Rds On (Max) @ Id, Vgs
70mOhm @ 15.1A, 10V120mOhm @ 8.2A, 10V145mOhm @ 6.8A, 10V199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 660µA4V @ 410µA4.5V @ 340µA4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V36 nC @ 10 V43 nC @ 10 V67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1330 pF @ 400 V1520 pF @ 100 V1544 pF @ 400 V2721 pF @ 400 V
Power Dissipation (Max)
83W (Tc)95W (Tc)139W (Tc)156W (Tc)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
IPP60R120P7XKSA1
MOSFET N-CH 600V 26A TO220-3
Infineon Technologies
2,490
In Stock
1 : ¥24.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
26A (Tc)
10V
120mOhm @ 8.2A, 10V
4V @ 410µA
36 nC @ 10 V
±20V
1544 pF @ 400 V
-
95W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
479
In Stock
1 : ¥25.29000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
16A (Tc)
10V
145mOhm @ 6.8A, 10V
4.5V @ 340µA
31 nC @ 10 V
±20V
1330 pF @ 400 V
-
83W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP60R199CPXKSA1
MOSFET N-CH 650V 16A TO220-3
Infineon Technologies
407
In Stock
1 : ¥32.76000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
16A (Tc)
10V
199mOhm @ 9.9A, 10V
3.5V @ 660µA
43 nC @ 10 V
±20V
1520 pF @ 100 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP60R070CFD7XKSA1
MOSFET N-CH 650V 31A TO220-3
Infineon Technologies
800
In Stock
1 : ¥46.39000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
31A (Tc)
10V
70mOhm @ 15.1A, 10V
4.5V @ 760µA
67 nC @ 10 V
±20V
2721 pF @ 400 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.