Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.onsemiVishay Siliconix
Series
-QFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
100 V200 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)3.6A (Tc)5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V10V
Rds On (Max) @ Id, Vgs
690mOhm @ 2.85A, 10V1.5Ohm @ 2.2A, 10V10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V25 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V340 pF @ 25 V770 pF @ 25 V
Power Dissipation (Max)
830mW (Tc)2.5W (Ta), 42W (Tc)2.5W (Ta), 55W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
DPAKTO-236ABTO-252AA
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252AA
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
onsemi
15,740
In Stock
1 : ¥9.36000
Cut Tape (CT)
2,500 : ¥3.86866
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
5.7A (Tc)
10V
690mOhm @ 2.85A, 10V
5V @ 250µA
25 nC @ 10 V
±30V
770 pF @ 25 V
-
2.5W (Ta), 55W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-236AB
BST82,215
MOSFET N-CH 100V 190MA TO236AB
Nexperia USA Inc.
29,429
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.81844
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
190mA (Ta)
5V
10Ohm @ 150mA, 5V
2V @ 1mA
-
±20V
40 pF @ 10 V
-
830mW (Tc)
-65°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
D-PAK (TO-252AA)
IRFR9220PBF
MOSFET P-CH 200V 3.6A DPAK
Vishay Siliconix
636
In Stock
1 : ¥14.45000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.6A (Tc)
10V
1.5Ohm @ 2.2A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
340 pF @ 25 V
-
2.5W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.