Single Bipolar Transistors

Results: 3
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tray
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
600 mA2 A20 A
Voltage - Collector Emitter Breakdown (Max)
60 V90 V100 V
Vce Saturation (Max) @ Ib, Ic
240mV @ 100mA, 1A1.6V @ 50mA, 500mA2.5V @ 5A, 20A
Current - Collector Cutoff (Max)
10nA (ICBO)1µA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 12A, 5V100 @ 150mA, 10V200 @ 100mA, 5V
Power - Max
1.5 W3.5 W140 W
Frequency - Transition
200MHz300MHz-
Operating Temperature
-65°C ~ 150°C (TJ)-65°C ~ 200°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
TO-204AA, TO-3TO-243AATO-261-4, TO-261AA
Supplier Device Package
PCPSOT-223 (TO-261)TO-204 (TO-3)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-223 (TO-261)
PZT2907AT1G
TRANS PNP 60V 0.6A SOT223
onsemi
10,769
In Stock
59,000
Factory
1 : ¥3.37000
Cut Tape (CT)
1,000 : ¥1.26825
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
600 mA
60 V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
1.5 W
200MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223 (TO-261)
TO-3 Pkg
2N5038G
TRANS NPN 90V 20A TO204
onsemi
585
In Stock
1,500
Factory
1 : ¥89.65000
Tray
-
Tray
Active
NPN
20 A
90 V
2.5V @ 5A, 20A
-
20 @ 12A, 5V
140 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-243AA
2SA2202-TD-E
TRANS PNP 100V 2A PCP
onsemi
1,671
In Stock
1 : ¥4.68000
Cut Tape (CT)
1,000 : ¥1.76765
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
2 A
100 V
240mV @ 100mA, 1A
1µA (ICBO)
200 @ 100mA, 5V
3.5 W
300MHz
150°C (TJ)
Surface Mount
TO-243AA
PCP
Showing
of 3

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.