Single FETs, MOSFETs

Results: 5
Manufacturer
GeneSiC SemiconductorMicrochip TechnologyonsemiQorvoWolfspeed, Inc.
Series
-C3M™G3R™, LoRing™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
SiC (Silicon Carbide Junction Transistor)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C
28.8A (Tc)30A (Tc)37A (Tc)85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V15V, 18V20V
Rds On (Max) @ Id, Vgs
34mOhm @ 45A, 18V90mOhm @ 20A, 15V100mOhm @ 15A, 20V105mOhm @ 20A, 12V110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
2.7V @ 24mA2.8V @ 1mA4V @ 5mA4.3V @ 5mA6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 12 V51 nC @ 15 V56 nC @ 20 V64 nC @ 20 V118 nC @ 15 V
Vgs (Max)
+19V, -8V+22V, -10V+23V, -10V+25, -15V±25V
Input Capacitance (Ciss) (Max) @ Vds
754 pF @ 100 V838 pF @ 1000 V1154 pF @ 800 V1350 pF @ 1000 V3863 pF @ 800 V
Power Dissipation (Max)
113.6W (Tc)179W (Tc)190W (Tc)200W (Tc)408W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAK-7TO-247-3TO-263-7
Package / Case
TO-247-3TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
5Results
Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
MSC080SMA120B
SICFET N-CH 1200V 37A TO247-3
Microchip Technology
219
In Stock
1 : ¥105.08000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
37A (Tc)
20V
100mOhm @ 15A, 20V
2.8V @ 1mA
64 nC @ 20 V
+23V, -10V
838 pF @ 1000 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
C3M0065090J
C3M0075120J
SICFET N-CH 1200V 30A D2PAK-7
Wolfspeed, Inc.
5,446
In Stock
1 : ¥161.56000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UF3C120080B7S
UF3C120080B7S
SICFET N-CH 1200V 28.8A D2PAK-7
Qorvo
4,861
In Stock
1 : ¥74.71000
Cut Tape (CT)
800 : ¥62.59751
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
28.8A (Tc)
-
105mOhm @ 20A, 12V
6V @ 10mA
23 nC @ 12 V
±25V
754 pF @ 100 V
-
190W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NTBG080N120SC1
SICFET N-CH 1200V 30A D2PAK-7
onsemi
749
In Stock
1 : ¥92.52000
Cut Tape (CT)
800 : ¥63.90253
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
20V
110mOhm @ 20A, 20V
4.3V @ 5mA
56 nC @ 20 V
+25, -15V
1154 pF @ 800 V
-
179W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R160MT12J-TR
G3R30MT12J-TR
1200V 30M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
1,123
In Stock
1 : ¥187.42000
Cut Tape (CT)
800 : ¥144.81596
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
85A (Tc)
15V, 18V
34mOhm @ 45A, 18V
2.7V @ 24mA
118 nC @ 15 V
+22V, -10V
3863 pF @ 800 V
-
408W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.