IGBT Modules

Results: 3
Series
-EasyPACK™, TRENCHSTOP™EasyPIM™
Voltage - Collector Emitter Breakdown (Max)
600 V1200 V
Current - Collector (Ic) (Max)
10 A35 A60 A
Power - Max
20 mW150 W
Vce(on) (Max) @ Vge, Ic
1.6V @ 15V, 10A (Typ)1.6V @ 15V, 35A2V @ 15V, 30A
Current - Collector Cutoff (Max)
4.5 µA7.3 µA1 mA
Input Capacitance (Cies) @ Vce
1.65 nF @ 25 V1.89 nF @ 25 V6.62 nF @ 25 V
Input
StandardThree Phase Bridge Rectifier
Operating Temperature
-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)
Supplier Device Package
AG-EASY1BAG-EASY1B-2Module
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Price
Series
Package
Product Status
IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MODULE FS
FS30R06W1E3BOMA1
IGBT MODULE 600V 60A 150W
Infineon Technologies
28
In Stock
1 : ¥284.38000
Tray
-
Tray
Active
Trench Field Stop
Three Phase Inverter
600 V
60 A
150 W
2V @ 15V, 30A
1 mA
1.65 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
30
In Stock
1 : ¥352.02000
Tray
Tray
Active
Trench Field Stop
Three Phase Inverter
1200 V
35 A
20 mW
1.6V @ 15V, 35A
7.3 µA
6.62 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY1B
1BPressfit
FP10R12W1T7B3BOMA1
IGBT MODULE LOW POWER EASY
Infineon Technologies
12
In Stock
1 : ¥310.98000
Tray
Tray
Active
Trench Field Stop
Three Phase Inverter
1200 V
10 A
20 mW
1.6V @ 15V, 10A (Typ)
4.5 µA
1.89 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY1B-2
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of 3

IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.