Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

EPC2304ENGRT TRANS GAN 200V .005OHM 3X5PQFN EPC	21,770 In Stock	1 : ¥69.04000 Cut Tape (CT) 3,000 : ¥36.71239 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	102A (Ta)	5V	3.1mOhm @ 32A, 5V	2.5V @ 8mA	24 nC @ 5 V	+6V, -4V	3195 pF @ 100 V	-	-	-55°C ~ 150°C (TJ)	Surface Mount	7-QFN (3x5)	7-PowerWQFN
IRF150P220AKMA1 MOSFET N-CH 150V 203A TO247-3 Infineon Technologies	1,500 In Stock	1 : ¥91.29000 Tube	StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	203A (Tc)	10V	2.7mOhm @ 100A, 10V	4.6V @ 265µA	200 nC @ 10 V	±20V	12000 pF @ 75 V	-	3.8W (Ta), 556W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IXFX240N25X3 MOSFET N-CH 250V 240A PLUS247-3 Littelfuse Inc.	267 In Stock 720 Factory	1 : ¥271.17000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	240A (Tc)	10V	5mOhm @ 120A, 10V	4.5V @ 8mA	345 nC @ 10 V	±20V	23800 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFK300N20X3 MOSFET N-CH 200V 300A TO264 Littelfuse Inc.	270 In Stock	1 : ¥271.66000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	300A (Tc)	10V	4mOhm @ 150A, 10V	4.5V @ 8mA	375 nC @ 10 V	±20V	23800 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFK220N20X3 MOSFET N-CH 200V 220A TO264 Littelfuse Inc.	310 In Stock 400 Factory	1 : ¥113.87000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	220A (Tc)	10V	6.2mOhm @ 110A, 10V	4.5V @ 4mA	204 nC @ 10 V	±20V	13600 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFB210N30P3 MOSFET N-CH 300V 210A PLUS264 Littelfuse Inc.	191 In Stock	1 : ¥250.89000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	210A (Tc)	10V	14.5mOhm @ 105A, 10V	5V @ 8mA	268 nC @ 10 V	±20V	16200 pF @ 25 V	-	1890W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXFK210N30X3 MOSFET N-CH 300V 210A TO264 Littelfuse Inc.	40 In Stock	1 : ¥271.66000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	210A (Tc)	10V	5.5mOhm @ 105A, 10V	4.5V @ 8mA	375 nC @ 10 V	±20V	24200 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFK240N25X3 MOSFET N-CH 250V 240A TO264 Littelfuse Inc.	0 In Stock Check Lead Time	1 : ¥271.66000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	240A (Tc)	10V	5mOhm @ 120A, 10V	4.5V @ 8mA	345 nC @ 10 V	±20V	23800 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.