Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedInfineon TechnologiesYAGEO XSEMI
Series
-SIPMOS®XP60PN72
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
21mA (Ta)50mA (Ta)53mA (Ta)80mA (Ta)90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
45Ohm @ 90mA, 10V72Ohm @ 50mA, 10V100Ohm @ 60mA, 10V160Ohm @ 16mA, 10V500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 94µA2.6V @ 250µA2.7V @ 8µA3V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.08 nC @ 10 V1.7 nC @ 10 V2.1 nC @ 5 V3.7 nC @ 10 V5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
21.8 pF @ 25 V25 pF @ 25 V28 pF @ 25 V64 pF @ 100 V131 pF @ 25 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
500mW (Ta)610mW (Ta)1W (Ta)1.1W (Ta)
Supplier Device Package
PG-SOT23PG-SOT89SOT-23SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-243AA
Stocking Options
Environmental Options
Media
Marketplace Product
6Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS127S-7
MOSFET N-CH 600V 50MA SOT23
Diodes Incorporated
183,247
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.54779
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50mA (Ta)
5V, 10V
160Ohm @ 16mA, 10V
4.5V @ 250µA
1.08 nC @ 10 V
±20V
21.8 pF @ 25 V
-
610mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN60H080DS-7
MOSFET N-CH 600V 80MA SOT23-3
Diodes Incorporated
54,091
In Stock
273,000
Factory
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.66535
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
80mA (Ta)
4.5V, 10V
100Ohm @ 60mA, 10V
3V @ 250µA
1.7 nC @ 10 V
±20V
25 pF @ 25 V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS126H6327XTSA2
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
111,687
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.26954
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS127SSN-7
MOSFET N-CH 600V 50MA SC59
Diodes Incorporated
3,639
In Stock
3,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.81370
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50mA (Ta)
5V, 10V
160Ohm @ 16mA, 10V
4.5V @ 250µA
1.08 nC @ 10 V
±20V
21.8 pF @ 25 V
-
610mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-89 Pkg
BSS225H6327FTSA1
MOSFET N-CH 600V 90MA SOT89
Infineon Technologies
4,520
In Stock
1 : ¥4.68000
Cut Tape (CT)
1,000 : ¥1.99400
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
90mA (Ta)
4.5V, 10V
45Ohm @ 90mA, 10V
2.3V @ 94µA
5.8 nC @ 10 V
±20V
131 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT89
TO-243AA
XP60PN72RLEN
XP60PN72RLEN
MOSFET N-CH 600V 53MA SOT23
YAGEO XSEMI
890
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.89055
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
53mA (Ta)
4.5V, 10V
72Ohm @ 50mA, 10V
2.6V @ 250µA
3.7 nC @ 10 V
±20V
64 pF @ 100 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.