Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesLittelfuse Inc.
Series
-CoolMOS™ CECoolMOS™ P7
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
500 V600 V700 V800 V1200 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)3.6A (Tc)4.5A (Tc)5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V13V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 1.7A, 10V1.5Ohm @ 1.1A, 10V2Ohm @ 500mA, 10V2Ohm @ 600mA, 13V4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 30µA3.5V @ 50µA3.5V @ 80µA3.5V @ 90µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.8 nC @ 10 V6 nC @ 10 V9.4 nC @ 10 V11 nC @ 10 V42 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
124 pF @ 100 V130 pF @ 400 V200 pF @ 100 V300 pF @ 500 V1100 pF @ 25 V
Power Dissipation (Max)
5W (Tc)6W (Tc)6.8W (Tc)200W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
PG-SOT223PG-SOT223-3TO-263HV
Package / Case
TO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-SOT223-3
IPN50R2K0CEATMA1
MOSFET N-CH 500V 3.6A SOT223
Infineon Technologies
10,641
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.36493
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
500 V
3.6A (Tc)
13V
2Ohm @ 600mA, 13V
3.5V @ 50µA
6 nC @ 10 V
±20V
124 pF @ 100 V
-
5W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-3
TO-261-4, TO-261AA
PG-SOT223
IPN70R2K0P7SATMA1
MOSFET N-CH 700V 3A SOT223
Infineon Technologies
17,151
In Stock
1 : ¥4.76000
Cut Tape (CT)
3,000 : ¥1.58997
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
700 V
3A (Tc)
10V
2Ohm @ 500mA, 10V
3.5V @ 30µA
3.8 nC @ 10 V
±16V
130 pF @ 400 V
-
6W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
PG-SOT223-3
IPN60R1K5CEATMA1
MOSFET N-CH 600V 5A SOT223
Infineon Technologies
5,839
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.76366
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
5A (Tc)
10V
1.5Ohm @ 1.1A, 10V
3.5V @ 90µA
9.4 nC @ 10 V
±20V
200 pF @ 100 V
-
5W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-3
TO-261-4, TO-261AA
PG-SOT223
IPN80R1K2P7ATMA1
MOSFET N-CH 800V 4.5A SOT223
Infineon Technologies
5,952
In Stock
1 : ¥8.54000
Cut Tape (CT)
3,000 : ¥3.51776
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
4.5A (Tc)
10V
1.2Ohm @ 1.7A, 10V
3.5V @ 80µA
11 nC @ 10 V
±20V
300 pF @ 500 V
-
6.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
TO-263AB
IXTA3N120HV
MOSFET N-CH 1200V 3A TO263
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥64.61000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
3A (Tc)
10V
4.5Ohm @ 500mA, 10V
5V @ 250µA
42 nC @ 10 V
±20V
1100 pF @ 25 V
-
200W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263HV
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.