Single FETs, MOSFETs

Results: 7
Series
CoolMOS™ CECoolMOS™ P6CoolMOS™ P7OptiMOS™
Drain to Source Voltage (Vdss)
80 V500 V600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)10.3A (Tc)12A (Tc)18A (Tc)18.5A (Tc)20.2A (Tc)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V13V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 60A, 10V180mOhm @ 5.6A, 10V190mOhm @ 6.2A, 13V190mOhm @ 7.6A, 10V280mOhm @ 3.8A, 10V360mOhm @ 2.7A, 10V400mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 300µA3.5V @ 510µA3.5V @ 90µA4V @ 140µA4V @ 190µA4V @ 280µA4.5V @ 630µ
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V18 nC @ 10 V25 nC @ 10 V32 nC @ 10 V37 nC @ 10 V47.2 nC @ 10 V69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
555 pF @ 400 V700 pF @ 100 V761 pF @ 400 V1081 pF @ 400 V1137 pF @ 100 V1750 pF @ 100 V4750 pF @ 40 V
Power Dissipation (Max)
22W (Tc)24W (Tc)26W (Tc)31W (Tc)32W (Tc)34W (Tc)39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
PG-TO220-3-312PG-TO220-FP
Stocking Options
Environmental Options
Media
Marketplace Product
7Results
Showing
of 7
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
5,003
In Stock
1 : ¥9.69000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
360mOhm @ 2.7A, 10V
4V @ 140µA
13 nC @ 10 V
±20V
555 pF @ 400 V
-
22W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
PG-TO220-FP
IPA60R280P7SXKSA1
MOSFET N-CH 600V 12A TO220
Infineon Technologies
1,218
In Stock
1 : ¥11.74000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
280mOhm @ 3.8A, 10V
4V @ 190µA
18 nC @ 10 V
±20V
761 pF @ 400 V
-
24W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
PG-TO220-3-312
IPA60R180P7SXKSA1
MOSFET N-CHANNEL 600V 18A TO220
Infineon Technologies
1,672
In Stock
1 : ¥14.28000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
180mOhm @ 5.6A, 10V
4V @ 280µA
25 nC @ 10 V
±20V
1081 pF @ 400 V
-
26W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-312
TO-220-3 Full Pack
PG-TO-220-FP
IPA50R190CEXKSA2
MOSFET N-CH 500V 18.5A TO220
Infineon Technologies
507
In Stock
1 : ¥16.83000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
18.5A (Tc)
13V
190mOhm @ 6.2A, 13V
3.5V @ 510µA
47.2 nC @ 10 V
±20V
1137 pF @ 100 V
-
32W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
PG-TO-220-FP
IPA60R190P6XKSA1
MOSFET N-CH 600V 20.2A TO220-FP
Infineon Technologies
116
In Stock
1 : ¥22.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
190mOhm @ 7.6A, 10V
4.5V @ 630µ
37 nC @ 10 V
±20V
1750 pF @ 100 V
-
34W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
PG-TO-220-FP
IPA057N08N3GXKSA1
MOSFET N-CH 80V 60A TO220-FP
Infineon Technologies
440
In Stock
1 : ¥20.28000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
60A (Tc)
6V, 10V
5.7mOhm @ 60A, 10V
3.5V @ 90µA
69 nC @ 10 V
±20V
4750 pF @ 40 V
-
39W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
PG-TO-220-FP
IPA60R400CEXKSA1
MOSFET N-CH 600V 10.3A TO220-FP
Infineon Technologies
0
In Stock
Check Lead Time
500 : ¥5.90412
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
10.3A (Tc)
10V
400mOhm @ 3.8A, 10V
3.5V @ 300µA
32 nC @ 10 V
±20V
700 pF @ 100 V
-
31W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
Showing
of 7

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.