Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SPB11N60C3ATMA1 MOSFET N-CH 650V 11A TO263-3 Infineon Technologies	3,547 In Stock	1 : ¥28.57000 Cut Tape (CT) 1,000 : ¥14.75540 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	380mOhm @ 7A, 10V	3.9V @ 500µA	60 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPD70R1K4P7SAUMA1 MOSFET N-CH 700V 4A TO252-3 Infineon Technologies	15,082 In Stock	1 : ¥4.76000 Cut Tape (CT) 2,500 : ¥1.81374 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	700 V	4A (Tc)	10V	1.4Ohm @ 700mA, 10V	3.5V @ 40µA	4.7 nC @ 10 V	±16V	158 pF @ 400 V	-	23W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
STN3N45K3 MOSFET N-CH 450V 600MA SOT223 STMicroelectronics	8,628 In Stock	1 : ¥5.25000 Cut Tape (CT) 4,000 : ¥2.44960 Tape & Reel (TR)	SuperMESH3™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	450 V	600mA (Tc)	10V	4Ohm @ 600mA, 10V	4.5V @ 50µA	9.5 nC @ 10 V	±30V	164 pF @ 50 V	-	3W (Ta)	150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
R6002ENHTB1 600V 1.7A SOP8, LOW-NOISE POWER Rohm Semiconductor	2,030 In Stock	1 : ¥9.44000 Cut Tape (CT) 2,500 : ¥3.53022 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1.7A (Ta)	10V	3.4Ohm @ 500mA, 10V	4V @ 1mA	6.5 nC @ 10 V	±20V	65 pF @ 25 V	-	2W (Ta)	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SIHP11N80AE-GE3 MOSFET N-CH 800V 8A TO220AB Vishay Siliconix	841 In Stock	1 : ¥16.01000 Tube	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	450mOhm @ 5.5A, 10V	4V @ 250µA	42 nC @ 10 V	±30V	804 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SPA11N65C3XKSA1 MOSFET N-CH 650V 11A TO220-FP Infineon Technologies	762 In Stock	1 : ¥28.98000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	380mOhm @ 7A, 10V	3.9V @ 500µA	60 nC @ 10 V	±20V	1200 pF @ 25 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
FCPF11N65 TRANS MOSFET N-CH 600V 11A 3PIN( Fairchild Semiconductor	415 Marketplace	Unavailable Unavailable in your selected currency	SuperFET™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11A (Tc)	-	380mOhm @ 5.5A, 10V	5V @ 250µA	52 nC @ 10 V	-	1490 pF @ 25 V	-	36W (Tc)	-	Through Hole	TO-220F	TO-220-3 Full Pack
STP10LN80K5 MOSFET N-CH 800V 8A TO220 STMicroelectronics	0 In Stock Check Lead Time	50 : ¥20.27500 Tube	MDmesh™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	630mOhm @ 4A, 10V	5V @ 100µA	15 nC @ 10 V	±30V	427 pF @ 100 V	-	110W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.