Single FETs, MOSFETs

Results: 29
Manufacturer
onsemiRohm SemiconductorSTMicroelectronicsWolfspeed, Inc.
Series
-E-Series
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V1200 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)17A (Tc)20A (Tc)21A (Tc)22A (Tc)24A (Tc)26A (Tc)30A (Tc)31A (Tc)32A (Tc)33A (Tc)39A (Tc)40A (Tc)43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V18V20V
Rds On (Max) @ Id, Vgs
22.1mOhm @ 47A, 18V23.4mOhm @ 42A, 18V39mOhm @ 27A, 18V47mOhm @ 21A, 18V52mOhm @ 20A, 18V78mOhm @ 13A, 18V81mOhm @ 12A, 18V97.5mOhm @ 17.9A, 15V104mOhm @ 10A, 18V105mOhm @ 20A, 18V110mOhm @ 20A, 20V117mOhm @ 10A, 18V137mOhm @ 7.6A, 18V156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id
3.5V @ 1mA (Typ)3.6V @ 5mA4V @ 1.4mA4V @ 2.5mA4V @ 4.4mA4.3V @ 5mA4.8V @ 11.1mA4.8V @ 22.2mA4.8V @ 6.45mA5V @ 1mA5.6V @ 10mA5.6V @ 13.3mA5.6V @ 2.5mA5.6V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 400 V38 nC @ 18 V42 nC @ 18 V45 nC @ 20 V48 nC @ 18 V51 nC @ 18 V56 nC @ 20 V57 nC @ 15 V58 nC @ 18 V60 nC @ 18 V62 nC @ 18 V63 nC @ 18 V64 nC @ 18 V91 nC @ 18 V
Vgs (Max)
+19V, -8V+21V, -4V+22V, -10V+22V, -4V+22V, -6V+25V, -10V+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
398 pF @ 800 V460 pF @ 500 V571 pF @ 500 V574 pF @ 800 V650 pF @ 400 V667 pF @ 800 V785 pF @ 800 V852 pF @ 500 V1200 pF @ 800 V1230 pF @ 800 V1337 pF @ 800 V1480 pF @ 1000 V1498 pF @ 800 V1526 pF @ 500 V
Power Dissipation (Max)
103W103W (Tc)108W (Tc)115W134W134W (Tc)145W (Tc)165W165W (Tc)175W (Tc)176W178W (Tc)262W262W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)175°C (TJ)
Supplier Device Package
HiP247™HiP247™ Long LeadsTO-247-3TO-247-4LTO-247N
Package / Case
TO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247N
SCT3160KLGC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
2,883
In Stock
1 : ¥82.83000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
208mOhm @ 5A, 18V
5.6V @ 2.5mA
42 nC @ 18 V
+22V, -4V
398 pF @ 800 V
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3040KLGC11
SICFET N-CH 1200V 55A TO247N
Rohm Semiconductor
974
In Stock
1 : ¥220.59000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
18V
52mOhm @ 20A, 18V
5.6V @ 10mA
107 nC @ 18 V
+22V, -4V
1337 pF @ 800 V
-
262W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247-3
NTHL080N120SC1A
SICFET N-CH 1200V 31A TO247-3
onsemi
474
In Stock
1 : ¥89.65000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
31A (Tc)
20V
110mOhm @ 20A, 20V
4.3V @ 5mA
56 nC @ 20 V
+25V, -15V
1670 pF @ 800 V
-
178W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
TO-247N
SCT4062KEC11
1200V, 62M, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
4,734
In Stock
1 : ¥119.20000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
18V
81mOhm @ 12A, 18V
4.8V @ 6.45mA
64 nC @ 18 V
+21V, -4V
1498 pF @ 800 V
-
115W
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247N
SCT4018KEC11
1200V, 81A, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
363
In Stock
1 : ¥120.43000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
81A (Tj)
18V
23.4mOhm @ 42A, 18V
4.8V @ 22.2mA
170 nC @ 18 V
+21V, -4V
4532 pF @ 800 V
-
312W
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247N
SCT2160KEHRC11
1200V, 22A, THD, SILICON-CARBIDE
Rohm Semiconductor
374
In Stock
1 : ¥120.60000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
18V
208mOhm @ 7A, 18V
4V @ 2.5mA
62 nC @ 18 V
+22V, -6V
1200 pF @ 800 V
-
165W (Tc)
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3160KLHRC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
601
In Stock
1 : ¥124.78000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
208mOhm @ 5A, 18V
5.6V @ 2.5mA
42 nC @ 18 V
+22V, -4V
398 pF @ 800 V
-
103W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
C2D10120D
E3M0075120D
1200V AUTOMOTIVE SIC 75MOHM FET
Wolfspeed, Inc.
382
In Stock
1 : ¥170.84000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
32A (Tc)
15V
97.5mOhm @ 17.9A, 15V
3.6V @ 5mA
57 nC @ 15 V
+19V, -8V
1480 pF @ 1000 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
Automotive
-
Through Hole
TO-247-3
TO-247-3
TO-247N
SCT4036KEC11
1200V, 36M, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
4,713
In Stock
1 : ¥177.33000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
176W
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247N
SCT2080KEGC11
MOSFET N-CH 1200V 40A TO247N
Rohm Semiconductor
990
In Stock
1 : ¥205.40000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
40A (Tc)
18V
117mOhm @ 10A, 18V
4V @ 4.4mA
106 nC @ 18 V
+22V, -6V
2080 pF @ 800 V
-
262W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3030KLGC11
SICFET N-CH 1200V 72A TO247N
Rohm Semiconductor
265
In Stock
1 : ¥640.26000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
72A (Tc)
18V
39mOhm @ 27A, 18V
5.6V @ 13.3mA
131 nC @ 18 V
+22V, -4V
2222 pF @ 800 V
-
339W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3017ALHRC11
SICFET N-CH 650V 118A TO247N
Rohm Semiconductor
1,098
In Stock
1 : ¥827.52000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
118A (Tc)
18V
22.1mOhm @ 47A, 18V
5.6V @ 23.5mA
172 nC @ 18 V
+22V, -4V
2884 pF @ 500 V
-
427W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3120ALHRC11
SICFET N-CH 650V 21A TO247N
Rohm Semiconductor
2,204
In Stock
1 : ¥81.68000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
18V
156mOhm @ 6.7A, 18V
5.6V @ 3.33mA
38 nC @ 18 V
+22V, -4V
460 pF @ 500 V
-
103W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247-3
SCT3080ALGC11
SICFET N-CH 650V 30A TO247N
Rohm Semiconductor
1,516
In Stock
1 : ¥98.27000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
30A (Tc)
18V
104mOhm @ 10A, 18V
5.6V @ 5mA
48 nC @ 18 V
+22V, -4V
571 pF @ 500 V
-
134W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
SCT4026DRHRC15
SCT4062KRHRC15
1200V, 26A, 4-PIN THD, TRENCH-ST
Rohm Semiconductor
401
In Stock
1 : ¥122.81000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
18V
81mOhm @ 12A, 18V
4.8V @ 6.45mA
64 nC @ 18 V
+21V, -4V
1498 pF @ 800 V
-
115W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
TO-247N
SCT4062KEHRC11
1200V, 26A, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
214
In Stock
1 : ¥122.81000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
18V
81mOhm @ 12A, 18V
4.8V @ 6.45mA
64 nC @ 18 V
+21V, -4V
1498 pF @ 800 V
-
115W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247-3 HiP
SCTW40N120G2VAG
SICFET N-CH 1200V 33A HIP247
STMicroelectronics
578
In Stock
1 : ¥141.94000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
33A (Tc)
18V
105mOhm @ 20A, 18V
5V @ 1mA
63 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
290W (Tc)
-55°C ~ 200°C (TJ)
Automotive
AEC-Q101
Through Hole
HiP247™
TO-247-3
TO-247N
SCT4036KEHRC11
1200V, 43A, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
398
In Stock
1 : ¥182.58000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
176W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247N
SCT2080KEHRC11
SICFET N-CH 1200V 40A TO247N
Rohm Semiconductor
4,844
In Stock
1 : ¥315.00000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
40A (Tc)
18V
117mOhm @ 10A, 18V
4V @ 4.4mA
106 nC @ 18 V
+22V, -6V
2080 pF @ 800 V
-
-
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247N
SCT2280KEHRC11
1200V, 14A, THD, SILICON-CARBIDE
Rohm Semiconductor
450
In Stock
1 : ¥83.33000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
14A (Tc)
18V
364mOhm @ 4A, 18V
4V @ 1.4mA
36 nC @ 400 V
+22V, -6V
667 pF @ 800 V
-
108W (Tc)
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3105KLHRC11
SICFET N-CH 1200V 24A TO247N
Rohm Semiconductor
441
In Stock
1 : ¥110.25000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
24A (Tc)
18V
137mOhm @ 7.6A, 18V
5.6V @ 3.81mA
51 nC @ 18 V
+22V, -4V
574 pF @ 800 V
-
134W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3105KLGC11
SICFET N-CH 1200V 24A TO247N
Rohm Semiconductor
151
In Stock
1 : ¥118.71000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
24A (Tc)
18V
137mOhm @ 7.6A, 18V
5.6V @ 3.81mA
51 nC @ 18 V
+22V, -4V
574 pF @ 800 V
-
134W
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3060ALHRC11
SICFET N-CH 650V 39A TO247N
Rohm Semiconductor
450
In Stock
30 : ¥165.71167
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
78mOhm @ 13A, 18V
5.6V @ 6.67mA
58 nC @ 18 V
+22V, -4V
852 pF @ 500 V
-
165W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3030ALHRC11
SICFET N-CH 650V 70A TO247N
Rohm Semiconductor
445
In Stock
1 : ¥296.03000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
70A (Tc)
18V
39mOhm @ 27A, 18V
5.6V @ 13.3mA
104 nC @ 18 V
+22V, -4V
1526 pF @ 500 V
-
262W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3040KLHRC11
SICFET N-CH 1200V 55A TO247N
Rohm Semiconductor
871
In Stock
1 : ¥312.78000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
18V
52mOhm @ 20A, 18V
5.6V @ 10mA
107 nC @ 18 V
+22V, -4V
1337 pF @ 800 V
-
262W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
Showing
of 29

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.